Nanotube-based switching elements with multiple controls

• US 7,339,401 B2
• Filed: 08/04/2005
• Issued: 03/04/2008
• Est. Priority Date: 08/13/2003
• Status: Active Grant

• Current Assignee: Nantero Incorporated
• Original Assignee: Nantero Incorporated
• Inventors: Bertin, Claude L., Segal, Brent M., Rueckes, Thomas
• Primary Examiner(s): Barnie; Rexford
• Assistant Examiner(s): Crawford; Jason
• Application Number:
  US11/197,196
• Publication Number:
  US 20050270824A1
• Time in Patent Office: 943 Days
• Field of Search: 326/40, 326/104, 977932-940
• US Class Current: 326/104
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 2213/17 Memory cell being a nanowire transistor
• CPC Class Codes: G11C 23/00 Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
• CPC Class Codes: H01H 1/0094 Switches making use of nanoelectromechanical systems [NEMS]
• CPC Class Codes: H01H 1/027 containing carbon particles or fibres
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/73 Bipolar junction transistors
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H10K 10/46 Field-effect transistors, e.g. organic thin-film transistors [OTFT] H10K10/43 takes precedence
• CPC Class Codes: H10K 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
• CPC Class Codes: H10K 19/80 Interconnections, e.g. terminals
• CPC Class Codes: H10K 85/221 Carbon nanotubes
• CPC Class Codes: Y10S 977/708 with distinct switching device
• CPC Class Codes: Y10S 977/932 for electronic or optoelectronic application
• CPC Class Codes: Y10S 977/936 in a transistor or 3-terminal device
• CPC Class Codes: Y10S 977/938 Field effect transistors, FETS, with nanowire- or nanotube-channel region
• CPC Class Codes: Y10S 977/94 in a logic circuit
• CPC Class Codes: Y10S 977/943 Information storage or retrieval using nanostructure

Abstract

Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior depending on the construction.

Claims

1. A Boolean logic circuit, comprising

at least one set of differential input terminals and an output terminal;

a network of nanotube switching elements electrically disposed between said at least one set of differential input terminals and said output terminal;

said network of nanotube switching elements effectuating a Boolean function transformation of Boolean signals on said at least one set of differential input terminals.

2. The Boolean logic circuit of claim 1 wherein said network of nanotube switching elements effectuates a Boolean NOT function of signals on the at least one set of differential input terminals.

3. The Boolean logic circuit of claim 1 wherein said network of nanotube switching elements effectuates a Boolean NOR function of signals on at least first and second sets of differential input terminals.

4. The Boolean logic circuit of claim 3 wherein said circuit is a cascode voltage switch logic circuit and wherein said network of nanotube switching elements further effectuates a Boolean NAND function of signals on at least first and second sets of differential input terminals.

5. The Boolean logic circuit of claim 1 wherein said network of nanotube switching elements effectuates a Boolean NAND function of signals on at least first and second sets of differential input terminals.

6. The Boolean logic circuit of claim 1 wherein said network of nanotube switching elements includes a first and a second nanotube switching element, each nanotube switching element, including

an output node;

a nanotube channel element having at least one electrically conductive nanotube; and

a control electrode disposed in relation to the nanotube channel element to controllably form an electrically conductive channel to the output node;

a release electrode disposed in relation to the nanotube channel element to controllably unform said electrically conductive channel to the output node;

wherein a first of the differential input terminals of the Boolean logic circuit is in electrical communication with the control electrode of the first and a second nanotube switching elements;

wherein a second of the differential input terminals of the Boolean logic circuit is in electrical communication with the release electrode of the first and a second nanotube switching elements;

wherein the output node of the first and a second nanotube switching elements are electrically coupled together and to the output terminal of the Boolean logic circuit;

wherein the nanotube channel element of the first nanotube switching element is in electrical communication with a logical true value, and the nanotube channel element of a second nanotube switching element is in electrical communication with a logical false value.

7. The Boolean logic circuit of claim 6 wherein channel formation of either the first and second nanotube switching element is caused by electromechanical deflection of said nanotube channel element to cause contact between said nanotube channel element and said output node.

8. The Boolean logic circuit of claim 7 wherein said nanotube channel element is deflectable in response to electrostatic forces caused by the relationship of signals on the nanotube channel element, on the control electrode and on the release electrode, and wherein each of the first and second nanotube switching elements includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node.

9. The Boolean logic circuit of claim 8 wherein each nanotube channel element is positionable into one of at least two positional states in response to the relationship of signals on the nanotube channel element, the control electrode and the release electrode, wherein one of at least two positional states is defined by the nanotube channel element being in a floating state, not in electrical communication with said output node.

10. The Boolean logic circuit of claim 9 wherein the positional state of each nanotube channel element is maintained in the absence of signals on the nanotube element, the control electrode and the release electrode.

11. A Boolean logic circuit, comprising

at least one input terminal and an output terminal;

a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal;

said network of nanotube switching elements effectuating a Boolean function transformation of Boolean signals on said at least one input terminal and at least one of said nanotube switching elements being capable of non-volatilely retaining informational state.

12. The Boolean logic circuit of claim 11 wherein the at least one nanotube switching elements capable of non-volatilely retaining informational state includes a nanotube channel element having at least one electrically conductive nanotube and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between an input node of the at least one switching element and an output node of the at least one switching element.

13. The switching element of claim 12 wherein the control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element.

14. The Boolean logic circuit of claim 11 wherein said network of nanotube switching elements includes a first and a second nanotube switching element, each nanotube switching element, including

an output node;

a nanotube channel element having at least one electrically conductive nanotube; and

a control electrode disposed in relation to the nanotube channel element to controllably form an electrically conductive channel to the output node;

a release electrode disposed in relation to the nanotube channel element to controllably unform said electrically conductive channel to the output node;

wherein the input terminal of the Boolean logic circuit is in electrical communication with the control electrode of the first and a second nanotube switching elements;

wherein a release signal is in electrical communication with the release electrode of the first and a second nanotube switching elements;

wherein the output node of the first and a second nanotube switching elements are electrically coupled together and to the output terminal of the Boolean logic circuit;

wherein the nanotube channel element of the first nanotube switching element is in electrical communication with a logical true value, and the nanotube channel element of a second nanotube switching element is in electrical communication with a logical false value.