Optoelectronic device based on an antiwaveguiding cavity
First Claim
1. A semiconductor optoelectronic device comprising:
- a) a cavity;
b) at least one multilayered interference reflector;
c) at least one p-n junction element; and
d) a substrate;
wherein the refractive index of the cavity is lower than a square root of a weighted average of a square of the refractive index of the multilayered interference reflector;
wherein a resonant optical mode, having a first wavelength and propagating at a first tilt angle has a first absolute value of the electric field strength at the p-n junction element and a first value of the leakage losses out of the cavity into the substrate;
wherein optical modes at a different wavelength than the first wavelength or propagating at a different angle than the first angle have a second absolute value of the electric field strength at the p-n junction element smaller than the first absolute value;
wherein the tilt angle is defined as an angle between a direction of propagation of light within the p-n junction element and a direction normal to the lateral plane; and
wherein the second absolute value of the electric field strength at the p-n junction element is smaller than the first absolute value by a factor greater than 3.
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Abstract
A semiconductor optoelectronic device includes at least one cavity and one multilayered interference reflector. The cavity is designed preferably to possess properties of an antiwaveguiding cavity, where no optical modes propagate in the lateral plane. The existing optical modes are the modes propagating in the vertical direction or in a direction tilted to the vertical direction at an angle smaller than the angle of the total internal reflection at the semiconductor/air interface. This design reduces the influence of parasitic optical modes and improves characteristics of optoelectronic devices including vertical cavity surface emitting lasers, tilted cavity lasers emitting through the top surface or the substrate, vertical or tilted cavity resonant photodetectors, vertical or tilted cavity resonant optical amplifiers, and light-emitting diodes.
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Citations
15 Claims
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1. A semiconductor optoelectronic device comprising:
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a) a cavity; b) at least one multilayered interference reflector; c) at least one p-n junction element; and d) a substrate; wherein the refractive index of the cavity is lower than a square root of a weighted average of a square of the refractive index of the multilayered interference reflector; wherein a resonant optical mode, having a first wavelength and propagating at a first tilt angle has a first absolute value of the electric field strength at the p-n junction element and a first value of the leakage losses out of the cavity into the substrate; wherein optical modes at a different wavelength than the first wavelength or propagating at a different angle than the first angle have a second absolute value of the electric field strength at the p-n junction element smaller than the first absolute value; wherein the tilt angle is defined as an angle between a direction of propagation of light within the p-n junction element and a direction normal to the lateral plane; and wherein the second absolute value of the electric field strength at the p-n junction element is smaller than the first absolute value by a factor greater than 3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification