Methods for producing low-k CDO films
First Claim
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1. A method of preparing a carbon doped silicon oxide (CDO) film on a substrate, the method comprising:
- (a) providing the substrate to a deposition chamber; and
(b) contacting the substrate with a primary CDO precursor and a secondary CDO precursor, wherein the primary CDO precursor is an alkylsiloxane and wherein the secondary precursor contains a carbon—
carbon triple bond, under process conditions whereby the CDO film is formed on the substrate, and whereby the CDO film contains carbon—
carbon triple bonds and the CDO film has a dielectric constant of less than 2.7,wherein the secondary CDO precursor comprises one or more compounds selected from the list consisting of Ethynyltrimethylsilane (ETMS), Propargyltrimethylsilane (PTMS), Propargyloxytrimethylsilane (POTMS), Bis(trimethylsilyl)acetylene (BTMSA), 1,3-Diethynyltetramethyldisiloxane (DTDS), Dimethylmethoxysilaneacetylene (DMMOSA), Methyldimethoxysilaneacetylene (MDMOSA), Dimethylethoxysilaneacetylene (DMEOSA), Methyldiethoxysilaneacetylene (MDEOSA), Ethyldiethoxysilaneacetylene (EDEOSA), and Dimethylsilane-diacetylene (DMSDA).
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Abstract
Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon—carbon triple bond, or carbon—carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a dielectric constant of not greater than about 2.7.
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14 Claims
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1. A method of preparing a carbon doped silicon oxide (CDO) film on a substrate, the method comprising:
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(a) providing the substrate to a deposition chamber; and (b) contacting the substrate with a primary CDO precursor and a secondary CDO precursor, wherein the primary CDO precursor is an alkylsiloxane and wherein the secondary precursor contains a carbon—
carbon triple bond, under process conditions whereby the CDO film is formed on the substrate, and whereby the CDO film contains carbon—
carbon triple bonds and the CDO film has a dielectric constant of less than 2.7,wherein the secondary CDO precursor comprises one or more compounds selected from the list consisting of Ethynyltrimethylsilane (ETMS), Propargyltrimethylsilane (PTMS), Propargyloxytrimethylsilane (POTMS), Bis(trimethylsilyl)acetylene (BTMSA), 1,3-Diethynyltetramethyldisiloxane (DTDS), Dimethylmethoxysilaneacetylene (DMMOSA), Methyldimethoxysilaneacetylene (MDMOSA), Dimethylethoxysilaneacetylene (DMEOSA), Methyldiethoxysilaneacetylene (MDEOSA), Ethyldiethoxysilaneacetylene (EDEOSA), and Dimethylsilane-diacetylene (DMSDA). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification