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System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques

  • US 7,341,928 B2
  • Filed: 02/18/2004
  • Issued: 03/11/2008
  • Est. Priority Date: 02/19/2003
  • Status: Expired due to Fees
First Claim
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1. A process for processing at least one section of each of a plurality of semiconductor film samples, comprising the steps of:

  • (a) controlling an irradiation beam source to emit successive irradiation beam pulses at a predetermined repetition rate;

    (b) using the emitted beam pulses, irradiating the at least one section of a first sample of the semiconductor film samples using at least one of a first sequential lateral solidification (“

    SLS”

    ) technique and a first uniform small grained material (“

    UGS”

    ) technique to process the at least one section of the first sample;

    (c) upon the completion of step (b), redirecting the beam pulses to impinge the at least one section of a second sample of the semiconductor film samples; and

    (d) using the redirected beam pulses, irradiating the at least one section of the second sample using at least one of a second SLS technique and a second UGS technique to process the at least one section of the second sample, the first and second techniques being one of different from one another and substantially the same.

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