System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques

• US 7,341,928 B2
• Filed: 02/18/2004
• Issued: 03/11/2008
• Est. Priority Date: 02/19/2003
• Status: Expired due to Fees

• Current Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Original Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Inventors: Im, James S.
• Primary Examiner(s): Sarkar; Asok Kumar
• Application Number:
  US10/544,498
• Publication Number:
  US 20060134890A1
• Time in Patent Office: 1,483 Days
• Field of Search: 117/44, 117/904, 257/E21.134, 438/487, 438/795
• US Class Current: 438/487
• CPC Class Codes: B23K 26/0622 by shaping pulses
• CPC Class Codes: B23K 26/064 by means of optical elements, e.g. lenses, mirrors or prisms
• CPC Class Codes: B23K 26/0648 comprising lenses
• CPC Class Codes: B23K 26/0665 by beam condensation on the workpiece, e.g. for focusing
• CPC Class Codes: B23K 26/067 Dividing the beam into multiple beams, e.g. multifocusing
• CPC Class Codes: B23K 26/0673 into independently operating sub-beams, e.g. beam multiplexing to provide laser beams for several stations
• CPC Class Codes: B23K 26/12 in a special atmosphere, e.g. in an enclosure
• CPC Class Codes: B23K 26/127 in an enclosure
• CPC Class Codes: B23K 26/128 Laser beam path enclosures
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02678 Beam shaping, e.g. using a mask
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/02689 using particle beams
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: Y10S 117/904 Laser beam
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and/or a first uniform small grained material (“UGS”) techniques to process the such sections) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such sections) of the second sample are irradiated using a second SLS technique and/or a second UGS technique to process the at least one section of the second sample. The first and second techniques can be different from one another or substantially the same.

Claims

1. A process for processing at least one section of each of a plurality of semiconductor film samples, comprising the steps of:

(a) controlling an irradiation beam source to emit successive irradiation beam pulses at a predetermined repetition rate;

(b) using the emitted beam pulses, irradiating the at least one section of a first sample of the semiconductor film samples using at least one of a first sequential lateral solidification (“

SLS”

) technique and a first uniform small grained material (“

UGS”

) technique to process the at least one section of the first sample;

(c) upon the completion of step (b), redirecting the beam pulses to impinge the at least one section of a second sample of the semiconductor film samples; and

(d) using the redirected beam pulses, irradiating the at least one section of the second sample using at least one of a second SLS technique and a second UGS technique to process the at least one section of the second sample, the first and second techniques being one of different from one another and substantially the same.

2. The process according to claim 1, wherein the second sample is an unprocessed sample, wherein, in step (b), the first sample is loaded on a stage of a first chamber, wherein, in step (d), the second sample is provided on a stage of the second chamber.

3. The process according to claim 2, further comprising the steps of:

(e) during step (b), unloading a third sample of the film samples previously irradiated and processed using at least one of the first and second techniques from the stage of the second chamber; and

(f) during step (b), after step (e) and before step (d), loading the second sample unto the stage of the second chamber.

4. The process according to claim 3, further comprising the steps of:

(g) during step (d), unloading the first sample from the stage of the first chamber; and

(h) during step (d) and after step (g), loading a fourth unprocessed sample of the film samples unto the stage of the first chamber.

5. The process according to claim 4, further comprising the steps of:

(i) upon the completion of step (h), redirecting the beam pulses to impinge the at least one section of the fourth sample; and

(j) after step (i) and using the redirected beam pulses, irradiating the at least one section of the fourth sample using at least one of the first and second techniques to process the at least one section of the fourth sample.

6. The process according to claim 3, further comprising the steps of:

(k) determining if the second sample successfully loaded unto the stage of the second chamber; and

(l) if step (k) produces an unsuccessful determination, preventing the irradiation of the second sample in step (d) until step (k) produces a successful result.

7. The process according to claim 1, wherein the beam pulses are redirected in step (c) using a beam redirecting arrangement which includes a beam reflection device.

8. The process according to claim 1, further comprising the steps of:

(m) determining if all of the at least one section of the first sample was successfully processed in step (b); and

(n) if step (m) produces an unsuccessful determination, preventing the irradiation of the second sample in step (d) until step (k) produces a successful result.

9. A system for processing at least one section of each of a plurality of semiconductor film samples, comprising:

a processing arrangement which, when executing a set of instruction, is operable to;

(a) control an irradiation beam source to emit successive irradiation beam pulses at a predetermined repetition rate,

(b) using the emitted beam pulses, direct the beam pulse to irradiate the at least one section of a first sample of the semiconductor film samples using at least one of a first sequential lateral solidification (“

SLS”

) technique and a first uniform small grained materials(“

UGS”

) technique to process the at least one section of the first sample,

(c) upon the completion of the processing of the at least one section of the first sample, effect a redirection of the beam pulses to impinge the at least one section of a second sample of the semiconductor film samples, and

(d) direct the redirected beam pulse to irradiate the at least one section of the second sample using at least one of a second SLS technique and a second UGS technique to process the at least one section of the second sample, the first and second techniques being one of different from one another and substantially the same.

10. The system according to claim 9, wherein the second sample is an unprocessed sample, wherein the processing arrangement is operable to load the first sample on a stage of a first chamber, wherein the processing arrangement is operable to load the second sample on a stage of the second chamber.

11. The system according to claim 10, wherein the processing arrangement is further operable to:

(e) during the irradiation of the first sample, effect an unloading of a third sample of the film samples previously irradiated and processed using at least one of the first and second techniques from the stage of the second chamber, and

(f) during the irradiation of the first sample and after the unloading of the second sample, effect a loading of the second sample unto the stage of the second chamber.

12. The system according to claim 11, wherein, the processing arrangement is further operable to:

(g) during the irradiation of the second sample, effecting the unloading the first sample from the stage of the first chamber, and

(h) during the irradiation of the second sample and after the unloading of the first sample, effect a loading of a fourth unprocessed sample of the film samples unto the stage of the first chamber.

13. The system according to claim 12, wherein the processing arrangement is further operable to:

(i) upon the completion of the loading of the fourth sample, effecting a redirection of the beam pulse to impinge the at least one section of the fourth sample, and

(j) after redirecting the beam pulses to impinge the at least one section of the fourth sample, directing the redirected beam pulses to irradiate the at least one section of the fourth sample using at least one of the first and second techniques to process the at least one section of the fourth sample.

14. The system according to claim 11, wherein the processing arrangement is further operable to:

(k) determine if the second sample successfully loaded unto the stage of the second chamber, and

(l) if item (k) produces an unsuccessful determination, prevent the irradiation of the second sample in until the second sample is successfully loaded unto the stage of the second chamber.

15. The system according to claim 9, wherein the processing arrangement is operable to redirect the beam pulses a beam redirecting arrangement which includes a beam reflection device.

16. The system according to claim 9, wherein the processing arrangement is further operable to:

(m) determine if all of the at least one section of the first sample was successfully processed; and

(n) if item (m) produces an unsuccessful determination, preventing the irradiation of the second sample until the processing of all of the at least one section of the first sample has been successfully processed.