Organic semiconductor transistor with banks confining the semiconductor

• US 7,342,247 B2
• Filed: 07/20/2005
• Issued: 03/11/2008
• Est. Priority Date: 10/15/2004
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Hong, Mun-Pyo, Lee, Yong-Uk, Kim, Bo-Sung, Ryu, Min-Seong
• Primary Examiner(s): Dickey; Thomas L.
• Application Number:
  US11/186,744
• Publication Number:
  US 20060081849A1
• Time in Patent Office: 965 Days
• Field of Search: 257/40, 349/44, 349/47, 349/52
• US Class Current: 257/40
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 19/10 comprising field-effect transistors
• CPC Class Codes: H10K 59/125 including organic TFTs [OTFT]
• CPC Class Codes: H10K 59/126 Shielding, e.g. light-blocking means over the TFTs
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/621 Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
• CPC Class Codes: H10K 85/623 containing five rings, e.g. pentacene
• CPC Class Codes: H10K 85/655 comprising only sulfur as heteroatom

Abstract

An organic thin film transistor array panel is provided, which includes: a substrate; a data line formed on the substrate and including a source electrode; a drain electrode formed on the substrate and separated from the data line; an organic semiconductor disposed on the source electrode and the drain electrode; a gate insulator formed on the organic semiconductor; a gate line including a gate electrode disposed on the gate insulator; a passivation layer formed on the gate line and having a first contact hole on the drain electrode; a pixel electrode connected to the drain electrode through the first contact hole; and an opaque light blocking member disposed under the organic semiconductor.

Claims

1. An organic thin film transistor array panel comprising:

a substrate;

a data line formed on the substrate and including a source electrode;

a drain electrode formed on the substrate and separated from the data line;

an organic semiconductor disposed on the source electrode and the drain electrode;

a bank having an opening that confines the organic semiconductor;

a gate insulator formed on the organic semiconductor;

a gate line including a gate electrode disposed on the gate insulator;

a passivation layer formed on the gate line and having a first contact hole on the drain electrode, wherein the bank has a second contact hole exposing the drain electrode together with the first contact hole;

a pixel electrode connected to the drain electrode through the first contact hole; and

an opaque light blocking member disposed under the organic semiconductor.

2. The organic thin film transistor array panel of claim 1 wherein the gate insulator is confined in the opening.

3. The organic thin film transistor array panel of claim 1, wherein the opaque light blocking member is formed on the substrate in alignment with the organic semiconductor.

4. The organic thin film transistor array panel of claim 3, further comprising an insulating layer disposed between the organic semiconductor and the light blocking member.

5. The organic thin film transistor array panel of claim 1, wherein the gate insulator comprises at least one selected from the group consisting of silicon dioxide, silicon nitride, maleimide-styrene, polyvinylphenol (PVP), and modified cyanoethyl pullulan (m-CEP).

6. The organic thin film transistor array panel of claim 5, wherein the gate insulator comprises an organic material.

7. The organic thin film transistor array panel of claim 1, wherein the organic semiconductor comprises at least one selected from the group consisting of:

tetracene, pentacene, and derivatives thereof with substituent;

oligothiophene including four to eight thiophenes connected at the positions 2, 5 of thiophene rings;

perylenetetracarboxylic dianhydride (PTCDA), naphthalenetetracarboxylic dianhydride (NTCDA), and imide derivatives thereof;

metallized phthalocyanine and halogenated derivatives thereof;

co-oligomer and co-polymer of thienylene and vinylene;

regioregular polythiophene;

perylene, coronene, and derivatives thereof with substituent; and

aromatic and heteroaromatic ring of the above-described materials with at least one hydrocarbon chain having one to thirty carbon atoms.

8. The organic thin film transistor array panel of claim 1, wherein the gate electrode substantially fully covers the gate insulator.

9. The organic thin film transistor array panel of claim 1, further comprising:

an insulating layer formed under the data line and the drain electrode;

a color filter formed under the insulating layer; and

the light blocking member formed under the color filter and in alignment with the organic semiconductor.

10. The thin film transistor array panel of claim 1, further comprising a color filter formed under the passivation layer.

11. An organic thin film transistor array panel comprising:

a substrate;

a data line formed on the substrate and including a source electrode;

a drain electrode formed on the substrate and separated from the data line;

an organic semiconductor disposed on the source electrode and the drain electrode;

a bank having an opening that confines the organic semiconductor;

a gate insulator formed on the organic semiconductor, wherein the gate insulator is confined in the opening;

a gate line including a gate electrode disposed on the gate insulator;

a passivation layer formed on the gate line and having a first contact hole on the drain electrode;

a pixel electrode connected to the drain electrode through the first contact hole; and

an opaque light blocking member disposed under the organic semiconductor.