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CMOS transistor and method of manufacture thereof

  • US 7,344,934 B2
  • Filed: 12/06/2004
  • Issued: 03/18/2008
  • Est. Priority Date: 12/06/2004
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • providing a workpiece, the workpiece comprising a first region and a second region;

    forming a first transistor in the first region of the workpiece, the first transistor including a first gate dielectric material;

    forming a second transistor in the second region of the workpiece, the second transistor including a second gate dielectric material; and

    exposing the first gate dielectric material and the second gate dielectric material to a silicon-containing substance to form a first silicon layer over the first gate dielectric material and a second silicon layer over the second gate dielectric material, wherein the first silicon layer and the second silicon layer pin the work function of the first transistor and the second transistor, respectively.

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