Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications
First Claim
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1. A method for wafer bonding, comprising:
- (a) creating a ZnSSe wafer by growing Zn(S, Se) on GaAs;
(b) creating an AlGaInN wafer by growing (Al, In, Ga)N on sapphire; and
(c) joining the ZnSSe and AlGaInN wafers together and fusing the joined ZnSSe and AlGaInN wafers.
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Abstract
A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.
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Citations
17 Claims
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1. A method for wafer bonding, comprising:
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(a) creating a ZnSSe wafer by growing Zn(S, Se) on GaAs; (b) creating an AlGaInN wafer by growing (Al, In, Ga)N on sapphire; and (c) joining the ZnSSe and AlGaInN wafers together and fusing the joined ZnSSe and AlGaInN wafers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification