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Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications

  • US 7,344,958 B2
  • Filed: 07/06/2005
  • Issued: 03/18/2008
  • Est. Priority Date: 07/06/2004
  • Status: Expired due to Fees
First Claim
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1. A method for wafer bonding, comprising:

  • (a) creating a ZnSSe wafer by growing Zn(S, Se) on GaAs;

    (b) creating an AlGaInN wafer by growing (Al, In, Ga)N on sapphire; and

    (c) joining the ZnSSe and AlGaInN wafers together and fusing the joined ZnSSe and AlGaInN wafers.

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