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Gallium nitride based light-emitting device

  • US 7,345,315 B2
  • Filed: 02/13/2006
  • Issued: 03/18/2008
  • Est. Priority Date: 11/25/2002
  • Status: Expired due to Fees
First Claim
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1. A light-emitting structure for a light emitting diode (LED), comprising a resonant cavity structure, a contact layer, an n-type metal electrode and a p-type metal electrode, wherein:

  • said resonant cavity structure formed by a metal reflector, a substrate, a buffer layer, an n-GaN based layer, an MQW active layer and a p-type distributed Bragg reflector (DBR), wherein and said substrate comprises sapphire;

    said contact layer being a p-GaN based layer and formed over said p-type DBR;

    said n-type metal electrode disposed over an exposing layer of said n-GaN layer; and

    said p-type metal electrode disposed over said p-GaN layer;

    wherein said MQW active layer comprises a material so that said MQW active layer generates a light with a wavelength comprising 380-600 nm in response to an applied electric power between said n-type metal electrode and said p-type metal electrode.

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