Semiconductor device and the manufacturing method for the same
First Claim
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1. A semiconductor device, comprising:
- a semiconductor substrate having first and second surface;
a first resin film formed on the first surface of the semiconductor substrate; and
a second resin film formed on the second surface of the semiconductor substrate;
wherein a projection electrode or an interconnection is formed on the first surface of the semiconductor substrate,the second resin film is made of low elastic resin which is capable of absorbing an impact applied to the second surface of the semiconductor substrate, andthe second resin film is thinner than the semiconductor substrate.
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Abstract
A semiconductor device has a semiconductor substrate having first and second surface, a first resin film formed on the first surface of the semiconductor substrate and a second resin film formed on the second surface of the semiconductor substrate. A projection electrode or an interconnection is formed on the first surface of the semiconductor substrate, the second resin film is made of low elastic resin which is capable of absorbing an impact applied to the second surface of the semiconductor substrate and the second resin film is thinner than the semiconductor substrate.
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17 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate having first and second surface; a first resin film formed on the first surface of the semiconductor substrate; and a second resin film formed on the second surface of the semiconductor substrate; wherein a projection electrode or an interconnection is formed on the first surface of the semiconductor substrate, the second resin film is made of low elastic resin which is capable of absorbing an impact applied to the second surface of the semiconductor substrate, and the second resin film is thinner than the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device, comprising:
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a semiconductor substrate having first and second surface; a first resin film formed on the first surface of the semiconductor substrate; and a second resin film formed on the second surface of the semiconductor substrate; wherein a projection electrode or an interconnection is formed on the first surface of the semiconductor substrate, and an elastic modulus of the second resin film is 15 GPa or less. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification