Method and apparatus for characterizing microelectromechanical devices on wafers

• US 7,345,806 B2
• Filed: 06/23/2004
• Issued: 03/18/2008
• Est. Priority Date: 06/23/2004
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Feinstein, Casey, Simonian, Dmitri
• Primary Examiner(s): Nguyen; Sang H.
• Application Number:
  US10/875,555
• Publication Number:
  US 20050286105A1
• Time in Patent Office: 1,364 Days
• Field of Search: 356 72- 73, 356121-122, 359290-295, 359/237, 359/224, 250/492.2, 250/492.3, 219/121.69
• US Class Current: 359/291
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10

Abstract

The invention provides a method and apparatus for evaluating the quality of microelectromechanical devices having deformable and deflectable members using resonation techniques. Specifically, product quality characterized in terms of uniformity of the deformable and deflectable elements is inspected with an optical resonance mapping mechanism on a wafer-level.

Claims

1. A method of evaluating a quality of a plurality of microelectromechanical devices on a wafer, each microelectromechanical device having a reflective and deflectable plate attached to a deformable hinge that is held on the wafer;

the method comprising;

measuring a distribution of a resonant frequency of the microelectromechanical device comprising;

illuminating a number of the reflective and deflectable plates with a light beam;

applying an AC voltage to the number of plates such that the plates oscillate in vicinity of their equilibrium states; and

sweeping the frequency of the AC voltage, and measuring the frequency response of the reflected light beam from the illuminated plates; and

evaluating and displaying said quality of a uniformity of the microelectromechanical device on the wafer based on the measured distribution of the resonant frequency.

2. The method of claim 1, wherein the microelectromechanical device is a micromirror array device having an array of micromirrors.

3. The method of claim 2, wherein the step of measuring the distribution of the resonant frequency further comprises:

measuring the resonant frequency from a number of micromirrors at a time;

repeating the measurement for the micromirrors across the wafer; and

obtaining the distribution based on the measured resonant frequencies of the micromirrors across the wafer.

4. The method of claim 2, wherein the number of micromirrors is 100 or less.

5. The method of claim 2, wherein the number of micromirrors is from 500 to 5000.

6. The method of claim 2, wherein the number of micromirrors is 1000 or more.

7. The method of claim 2, wherein each of the plurality of the mirror plates on the wafer has a dimension of 50 microns or less.

8. The method of claim 2, wherein each of the plurality of the mirror plates on the wafer has a dimension of 20 microns or less.

9. The method of claim 2, wherein the plurality of the mirror plates on the wafer is organized into a set of mirror plate arrays, wherein the adjacent mirror plates within an array have a center-to-center distance of 20 microns or less.

10. The method of claim 2, wherein the step of evaluating the quality of the mirror plates further comprises:

calculating a variation of the resonance frequencies of the mirror plate across the wafer; and

evaluating the quality of the mirror plates based on the calculated variation.

11. The method of claim 10, further comprising:

marking a die on the wafer as “

good”

if the variation of the resonance frequency of the die is equal to or less than the predetermined quality criterion.

12. The method of claim 11, wherein the predetermined criterion is that the variation of the resonance frequency is 2% or less.

13. The method of claim 11, wherein the predetermined criterion is that the variation of the resonance frequency is 1% or less.

14. The method of claim 2, further comprising:

placing the wafer having the mirror plates and hinges into a chamber that has a pressure of lower than 1Torr.

15. The method of claim 14, wherein the pressure inside the chamber is 200 mTorr or less.

16. The method of claim 14, wherein the pressure inside the chamber is 100 mTorr or less.

17. The method of claim 14, wherein the wafer is light transmissive.

18. The method of claim 17, wherein the light transmissive wafer is glass.

19. The method of claim 2, wherein the steps are performed in the absence of a semiconductor wafer having a plurality of electrodes and circuitry formed thereon.

20. The method of claim 2, wherein the step of determining the uniformity further comprises:

passing the microelectromechanical device if the uniformity is within a predetermined threshold; and

failing the microelectromechanical device if the uniformity is beyond the predetermined threshold.

21. The method of claim 1, wherein the parameter is measured in the absence of a DC voltage.

22. The method of claim 1, wherein the AC voltage has an amplitude that is 10% or less of a voltage amplitude necessary for rotating the mirror plate to an ON state that corresponds to a rotation angle of 12°

degrees or more.

23. The method of claim 13, wherein the amplitude of the AC voltage is 1% or less of the amplitude of the voltage necessary for rotating the mirror plate to the ON state.

24. The method of claim 1, further comprising:

measuring the uniformity with a quality-peak Q that is a function of the full-width-half-maximum (FWHM) of the frequency response, wherein the FWHM is defined as a ratio of the frequency integrated over the frequency scan range to the peak value of the frequency resonance peak.

25. The method of claim 11, further comprising:

detecting a light beam reflected from the mirror plates, wherein the reflected light propagates along a direction that is perpendicular to a surface of the plates of the microelectromechanical devices when the plates are at a natural resting state.

26. A method of evaluating a quality of a plurality of microelectromechanical devices on a wafer, each microelectromechanical device having a reflective and deflectable plate attached, the method comprising:

applying an AC voltage in the absence of a DC voltage to a plurality of the plates to cause each of the plurality of plates to resonate in the vicinity of an equilibrium state;

detecting a resonate frequency of the plate; and

determining and displaying the quality of themicroelectromechanical device based upon the detected resonance frequency.

27. The method of claim 26, wherein the step of determining the quality further comprises:

passing the microelectromechanical device if the detected resonance frequency is within a predetermined threshold; and

failing the microelectromechanical device if the detected resonance frequency is beyond the predetermined threshold.

28. A method of evaluating a quality of a plurality of microelectromechanical devices on a wafer, each microelectromechanical device having a reflective and deflectable plate attached, the method comprising:

moving a plurality of plates of the microelectromechanical devices to a particular state with a DC voltage;

applying an AC voltage to the plurality of plates to cause each of the plurality of plates to resonate in the vicinity of an equilibrium position of the particular state;

detecting a resonate frequency of the plate; and

determining and displaying the quality of the microelectromechanical device based upon the detected resonance frequency;

wherein in the particular position, the plate has an angle to a substrate on which the plates are formed; and

wherein the angle is 14°

degrees or more.

29. The method of claim 28, wherein the step of determining the quality further comprises:

passing the microelectromechanical device if the detected resonance frequency is within a predetermined threshold; and

failing the microelectromechanical device if the detected resonance frequency is beyond the predetermined threshold.

30. The method of claim 28, wherein the angle is 18°

degrees or more.

31. The method of claim 28, wherein the angle is 20°

degrees or more.

32. The method of claim 28, wherein the angle is 22°

degrees or more.