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Interconnects for semiconductor light emitting devices

  • US 7,348,212 B2
  • Filed: 09/13/2005
  • Issued: 03/25/2008
  • Est. Priority Date: 09/13/2005
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a semiconductor light emitting device comprising;

    a light emitting layer disposed between an n-type region and a p-type region;

    contacts electrically connected to the n-type region and the p-type region; and

    a first metal layer formed on one of the contacts;

    providing a mount comprising;

    a second metal layer formed on the mount; and

    a third metal layer plated over the second metal layer; and

    physically connecting the semiconductor light emitting device to the mount by causing interdiffusion of the first, second, and third metal layers;

    wherein the third metal layer has a lateral extent of at least 20% of an area of the semiconductor light emitting device.

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