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Nitride-based compound semiconductor light emitting device

  • US 7,348,601 B2
  • Filed: 08/30/2005
  • Issued: 03/25/2008
  • Est. Priority Date: 08/31/2004
  • Status: Active Grant
First Claim
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1. A nitride-based compound semiconductor light emitting device, having a first ohmic electrode, a first bonding metal layer, a second bonding metal layer and a second ohmic electrode provided in this order on a conductive substrate, and also having a nitride-based compound semiconductor layer provided on the second ohmic electrode, wherein a part of a main surface of said second ohmic electrode is exposed.

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