CMOS imager with selectively silicided gates
First Claim
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1. An imager comprising:
- a substrate doped to a first conductivity type;
at least one pixel cell comprising;
a photocollection region within said substrate, wherein said photocollection region is doped to a second conductivity type and comprises a photogate;
at least one transistor gate over said substrate; and
an opaque conductive material over said substrate, said opaque conductive material only partially covering said transistor gate and said photogate; and
a signal processing circuit on said substrate, wherein said circuit is connectable to said at least one pixel cell.
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Abstract
The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager.
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Citations
13 Claims
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1. An imager comprising:
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a substrate doped to a first conductivity type; at least one pixel cell comprising; a photocollection region within said substrate, wherein said photocollection region is doped to a second conductivity type and comprises a photogate; at least one transistor gate over said substrate; and an opaque conductive material over said substrate, said opaque conductive material only partially covering said transistor gate and said photogate; and a signal processing circuit on said substrate, wherein said circuit is connectable to said at least one pixel cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A processing system comprising:
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a processor; and an imaging device coupled to said processor and including; a substrate doped to a first conductivity type; at least one pixel cell comprising; a photocollection region within said substrate, wherein said photocollection region is doped to a second conductivity type and comprises a photogate; at least one transistor gate over said substrate; and an opaque conductive material over said substrate, said opaque conductive material only partially covering said transistor gate and said photogate; and a signal processing circuit on said substrate, wherein said circuit is connectable to said at least one pixel cell. - View Dependent Claims (10, 11, 12, 13)
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Specification