Power semiconductor device with integrated passive component

• US 7,348,656 B2
• Filed: 09/21/2006
• Issued: 03/25/2008
• Est. Priority Date: 09/22/2005
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Briere, Michael A.
• Primary Examiner(s): Tran; Minhloan
• Assistant Examiner(s): Liu; Benjamin Tzu-Hung
• Application Number:
  US11/524,694
• Publication Number:
  US 20070063231A1
• Time in Patent Office: 551 Days
• Field of Search: 257/277, 257/379, 257/532, 257/535, 257/E27.016, 257/E27.025, 257/E27.034, 257/E27.048, 257/E27.071
• US Class Current: 257/532
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 29/66712 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A power semiconductor device that includes a passive component, e.g., a capacitor, mechanically and electrically coupled to at least one pole thereof.

Claims

1. A power semiconductor device comprising:

a discreet power semiconductor switch having a first power electrode on one surface thereof; and

a capacitor on another surface instead of a power electrode, said capacitor having a first conductive plate directly mechanically and electrically coupled to the semiconductor body of said power semiconductor switch.

2. The power semiconductor device of claim 1, wherein said power semiconductor switch is a power MOSFET.

3. The power semiconductor device of claim 1, wherein said first conductive plate is directly mechanically and electrically coupled to the drain region of a power MOSFET.

4. The power semiconductor device of claim 1, wherein said discreet power semiconductor device is configured for application in a driver circuit.

5. The power semiconductor device of claim 1, wherein said device is configured for use in a predriver circuit.

6. The power semiconductor device of claim 1, wherein said device is configured for use in a power circuit.

7. The power semiconductor device of claim 1, wherein said capacitor is formed using drop-on-demand fabrication.

8. A power semiconductor device comprising:

a discreet power semiconductor switch;

a capacitor mechanically coupled to a major portion of said power semiconductor switch and having a first conductive plate, a second conductive plate and a dielectric body disposed between said first conductive plate and said second conductive plate, and wherein said power semiconductor switch includes a first power electrode and a second power electrode, wherein said first conductive plate is electrically connected to said first power electrode.

9. The power semiconductor device of claim 8, further comprising a dielectric spacer disposed between said first power electrode and said first conductive plate serving to mechanically couple said first conductive plate to said first power electrode.

10. The power semiconductor device of claim 9, wherein said first conductive plate is electrically connected to said first power electrode through a conductive filled via in said dielectric spacer.

11. The power semiconductor device of claim 9, wherein said first conductive plate is electrically connected to said first power electrode through a plurality of conductive filled vias in said dielectric spacer.

12. The power semiconductor device of claim 8, wherein said first power electrode is the source electrode of a power MOSFET.

13. The power semiconductor device of claim 8, wherein said first power electrode is the drain electrode of a power MOSFET.