Method and system for reducing the peak current in refreshing dynamic random access memory devices
First Claim
1. A synchronous dynamic random access memory (“
- SDRAM”
) device, comprising;
a row address circuit operable to receive and decode row address signals applied to external address terminals of the SDRAM device;
a column address circuit operable to receive and decode column address signals applied to the external address terminals;
a DRAM cell array operable to store data written to or read from the array at a location determined by the decoded row address signals and the decoded column address signals;
a data path circuit operable to couple data signals corresponding to the data between the array and external data bus terminals;
a command decoder operable to decode a plurality of command signals applied to respective external command terminals of the SDRAM device, the command decoder being operable to generate control signals corresponding to the decoded command signals;
refresh circuitry operable to initiate a refresh of the DRAM memory cells responsive to control signals from the command decoder resulting from a refresh command being applied to the command decoder;
a delay circuit coupled to the command decoder and to the refresh circuitry, the delay circuit being operable to initiate a refresh of the DRAM memory cells after a delay interval corresponding to a portion of at least one period of the clock signal and operable to determine the delay interval by combining a base delay value with a delay adjustment value;
a mode register programmed with the base delay value corresponding to the portion of at least one period of the clock signal, the mode register being coupled to the delay circuit so that the delay circuit can receive the base delay value from the mode register; and
a configuration register receiving the delay adjustment value from data bus terminals of the SDRAM device, the configuration register being coupled to the delay circuit so that the delay circuit can receive the delay adjustment value from the configuration register.
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Accused Products
Abstract
A dynamic random access memory device includes a mode register that is programmed with a delay value. In some embodiments, a offset code is also stored in the memory device. The memory device uses the delay value, which may be added to or multiplied by the offset code, to delay the initiation of a received auto-refresh or self-refresh command. A large number of dynamic random access memory devices in a system may be provided with different delay values and possibly offset codes so that the memory device do not all perform refreshes simultaneously in response to an auto-refresh or self-refresh command issued to all of the memory devices simultaneously. As a result, the peak current drawn by the memory devices resulting from the auto-refresh command or self-refresh command is maintained at a relatively low value.
30 Citations
17 Claims
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1. A synchronous dynamic random access memory (“
- SDRAM”
) device, comprising;a row address circuit operable to receive and decode row address signals applied to external address terminals of the SDRAM device; a column address circuit operable to receive and decode column address signals applied to the external address terminals; a DRAM cell array operable to store data written to or read from the array at a location determined by the decoded row address signals and the decoded column address signals; a data path circuit operable to couple data signals corresponding to the data between the array and external data bus terminals; a command decoder operable to decode a plurality of command signals applied to respective external command terminals of the SDRAM device, the command decoder being operable to generate control signals corresponding to the decoded command signals; refresh circuitry operable to initiate a refresh of the DRAM memory cells responsive to control signals from the command decoder resulting from a refresh command being applied to the command decoder; a delay circuit coupled to the command decoder and to the refresh circuitry, the delay circuit being operable to initiate a refresh of the DRAM memory cells after a delay interval corresponding to a portion of at least one period of the clock signal and operable to determine the delay interval by combining a base delay value with a delay adjustment value; a mode register programmed with the base delay value corresponding to the portion of at least one period of the clock signal, the mode register being coupled to the delay circuit so that the delay circuit can receive the base delay value from the mode register; and a configuration register receiving the delay adjustment value from data bus terminals of the SDRAM device, the configuration register being coupled to the delay circuit so that the delay circuit can receive the delay adjustment value from the configuration register. - View Dependent Claims (2, 3, 4, 5, 6)
- SDRAM”
-
7. A processor-based system, comprising:
-
a processor having a processor bus; an input device coupled to the processor through the processor bus to allow data to be entered into the computer system; an output device coupled to the processor through the processor bus to allow data to be output from the computer system; a data storage device coupled to the processor through the processor bus to allow data to be read from a mass storage device; a memory controller coupled to the processor through the processor bus; and a plurality of synchronous dynamic random access memory (“
DRAM”
) devices coupled to the memory controller, the synchronous DRAM devices operating in synchronism with a clock signal, each of the DRAM devices comprising;a row address circuit operable to receive and decode row address signals applied to external address terminals of the DRAM device; a column address circuit operable to receive and decode column address signals applied to the external address terminals; a DRAM cell array operable to store data written to or read from the array at a location determined by the decoded row address signals and the decoded column address signals; a data path circuit operable to couple data signals corresponding to the data between the array and external data bus terminals; a command decoder operable to decode a plurality of command signals applied to respective external command terminals of the DRAM device, the command decoder being operable to generate control signals corresponding to the decoded command signals; refresh circuitry operable to initiate a refresh of the DRAM memory cells responsive to control signals from the command decoder resulting from a refresh command being applied to the command decoder; a delay circuit coupled to the command decoder and to the refresh circuitry, the delay circuit being operable to determine a delay interval by combining a base delay value with a delay adjustment value and to initiate a refresh of the DRAM memory cells after the delay interval, the delay interval corresponding to a portion of at least one period of the clock signal, at least some of the DRAM devices having a different delay interval so that a refresh command simultaneously issued to all of the DRAM devices is initiated in different DRAM devices at different times; a mode register programmed with a base delay value corresponding to the portion of at least one period of the clock signal, the mode register being coupled to the delay circuit so that the delay circuit can receive the base delay value from the mode register; and a configuration register receiving a delay adjustment value from data bus terminals of the DRAM device, the configuration register being coupled to the delay circuit so that the delay circuit can receive the delay adjustment value from the configuration register. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A memory system, comprising:
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a memory hub controller; and a plurality of memory modules, each of the memory modules comprising; a plurality of dynamic random access memory (“
DRAM”
) devices each having a plurality of DRAM memory cells; anda memory hub coupled to the memory hub controller and the DRAM devices, the memory hub including a delay circuit operable to determine a delay interval by combining a base delay value with a delay adjustment value and to initiate a refresh of the DRAM memory cells after the delay interval, the delay circuits in at least some of the memory hubs having different delay intervals so that a refresh command simultaneously issued to all of the memory modules cause refresh of the memory cells in some of the DRAM devices to be initiated at different time; a mode register programmed with a base delay value corresponding to the portion of at least one period of the clock signal, the mode register being coupled to the delay circuit so that the delay circuit can receive the base delay value from the mode register; and a configuration register receiving a delay adjustment value from data bus terminals of the DRAM device, the configuration register being coupled to the delay circuit so that the delay circuit can receive the delay adjustment value from the configuration register. - View Dependent Claims (14, 15, 16, 17)
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Specification