Semiconductor device

• US 7,351,068 B2
• Filed: 01/26/2007
• Issued: 04/01/2008
• Est. Priority Date: 02/08/2006
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Shigenami, Kenichi, Sukegawa, Shunichi, Kudo, Mamoru
• Primary Examiner(s): Duverne; J. F.
• Application Number:
  US11/627,527
• Publication Number:
  US 20070184677A1
• Time in Patent Office: 431 Days
• Field of Search: 439/66, 439/71, 439/73, 324/762, 324/754, 324/763, 324/158.1, 361/734, 361/77, 361/720, 361/810, 174255-257
• US Class Current: 439/66
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06527 Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 2225/06572 Auxiliary carrier between devices, the carrier having an electrical connection structure
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/538 the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates H05K takes precedence; manufacture or treatment H01L21/4846 ; mountings per se H01L23/12; materials H01L23/49866
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/0652 the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/157 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2924/19107 : off-chip wires

Abstract

A semiconductor device includes a first plate member having a circuit surface on which a circuit is provided, a second plate member having a circuit surface on which a circuit is provided, a plurality of first flat plates disposed on the circuit surface of the first plate member, a first communicating section disposed on the circuit surface of the first plate member, a plurality of second flat plates disposed on the circuit surface of the second plate member, and a second communicating section disposed on the circuit surface of the second plate member. The first plate member and the second plate member are arranged so that a surface of the first plate member opposite to the circuit surface faces a surface of the second plate member opposite to the circuit surface.

Claims

1. A semiconductor device comprising:

a first plate member formed of a high-resistance material, and having a circuit surface on which a circuit is provided;

a second plate member formed of a high-resistance material, and having a circuit surface on which a circuit is provided;

a plurality of first flat plates serving as communication antennas, the first flat plates being disposed on the circuit surface of the first plate member;

a first communicating section for performing communication via the first flat plates, the first communicating section being disposed on the circuit surface of the first plate member;

a plurality of second flat plates serving as communication antennas, the second flat plates being disposed on the circuit surface of the second plate member; and

a second communicating section for performing communication via the second flat plates, the second communicating section being disposed on the circuit surface of the second plate member,

wherein the first plate member and the second plate member are arranged so that a surface of the first plate member opposite to the circuit surface faces a surface of the second plate member opposite to the circuit surface.

2. The semiconductor device according to claim 1, wherein the first plate member has a bonding wire for receiving power, and the second plate member has a bump for receiving power.

3. The semiconductor device according to claim 1, wherein the first plate member and the second plate member are silicon interposers, and have a volume resistivity of 1 kΩ

cm or more.

4. The semiconductor device according to claim 1,

wherein the first plate member and the second plate member include at least two pairs of the first plate members and the second plate members,

wherein the circuit surface of one of the first plate member and the second plate member in one of the pairs faces the circuit surface of one of the first plate member and the second plate member in the other pair, and

wherein a communication bump and a power supply bump are provided between the circuit surfaces.