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Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process

  • US 7,351,644 B2
  • Filed: 09/14/2006
  • Issued: 04/01/2008
  • Est. Priority Date: 08/08/2005
  • Status: Expired due to Fees
First Claim
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1. A method comprising:

  • initiating controlled cleaving at a portion of a cleave plane to detach a thickness of a semiconductor material from a substrate while the thickness remains joined to a frontside of a first handle substrate, thereby exposing a surface of the thickness of semiconductor material;

    joining a backside of the first handle substrate to a second handle substrate;

    forming an integrated circuit device on the surface;

    forming a planarized layer overlying the surface and the integrated circuit device;

    joining the planarized layer to a third handle substrate; and

    removing the second handle substrate from the first handle substrate including the thickness of semiconductor material, while the third handle substrate remains joined to the planarized layer.

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