Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process
First Claim
1. A method comprising:
- initiating controlled cleaving at a portion of a cleave plane to detach a thickness of a semiconductor material from a substrate while the thickness remains joined to a frontside of a first handle substrate, thereby exposing a surface of the thickness of semiconductor material;
joining a backside of the first handle substrate to a second handle substrate;
forming an integrated circuit device on the surface;
forming a planarized layer overlying the surface and the integrated circuit device;
joining the planarized layer to a third handle substrate; and
removing the second handle substrate from the first handle substrate including the thickness of semiconductor material, while the third handle substrate remains joined to the planarized layer.
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Abstract
A method for fabricating one or more devices, e.g., integrated circuits. The method includes providing a substrate (e.g., silicon), which has a thickness of semiconductor material and a surface region. The substrate also has a cleave plane provided within the substrate to define the thickness of semiconductor material. The method includes joining the surface region of the substrate to a first handle substrate. In a preferred embodiment, the first handle substrate is termed a “thin” substrate, which provides suitable bonding characteristics, can withstand high temperature processing often desired during the manufacture of semiconductor devices, and has desirable de-bonding characteristics between it and a second handle substrate, which will be described in more detail below. In a preferred embodiment, the first handle substrate is also thick enough and rigid enough to allow for cleaving according to a specific embodiment.
314 Citations
25 Claims
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1. A method comprising:
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initiating controlled cleaving at a portion of a cleave plane to detach a thickness of a semiconductor material from a substrate while the thickness remains joined to a frontside of a first handle substrate, thereby exposing a surface of the thickness of semiconductor material;
joining a backside of the first handle substrate to a second handle substrate;
forming an integrated circuit device on the surface;
forming a planarized layer overlying the surface and the integrated circuit device;
joining the planarized layer to a third handle substrate; and
removing the second handle substrate from the first handle substrate including the thickness of semiconductor material, while the third handle substrate remains joined to the planarized layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for fabricating a device on a substrate, the method comprising:
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joining a surface region of a substrate to a first handle substrate; initiating a controlled cleaving action at a portion of a cleave plane in the substrate to detach the thickness of semiconductor material from the substrate while the thickness remains joined to the first handle substrate;
joining a backside of the first handle substrate to a second handle substrate;
forming a device on a portion of the thickness of semiconductor material;
forming a planarized surface region overlying the thickness;
joining the planarized surface region to a face of a third handle substrate; and
removing the second handle substrate from the first handle substrate including the thickness of semiconductor material, while the face of the third handle substrate remains joined to the planarized surface region. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification