Post passivation interconnection schemes on top of the IC chips

• US 7,351,650 B2
• Filed: 11/14/2005
• Issued: 04/01/2008
• Est. Priority Date: 10/18/2000
• Status: Expired due to Term

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megica Corporation (Chipbond Technology Corporation)
• Inventors: Lee, Jin-Yuan, Lin, Mou-Shiung
• Primary Examiner(s): Pham; Long
• Application Number:
  US11/273,447
• Publication Number:
  US 20060063374A1
• Time in Patent Office: 869 Days
• Field of Search: 438/618, 438/622, 438/624
• US Class Current: 438/618
• CPC Class Codes: H01L 21/768 Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/5283 Cross-sectional geometry
• CPC Class Codes: H01L 23/5286 Arrangements of power or ground buses
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 23/62 Protection against overvoltage, e.g. fuses, shunts
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over the layer of dielectric, a thick second layer of dielectric is created over the surface of the layer of passivation. Thick and wide interconnect lines are created in the thick second layer of dielectric. The first layer of dielectric may also be eliminated, creating the wide thick interconnect network on the surface of the layer of passivation that has been deposited over the surface of a substrate.

Claims

1. A method for fabricating a chip comprising:

providing a silicon substrate, an ESD circuit in or on said silicon substrate, a driver, receiver or I/O circuit in or on said silicon substrate, a first internal circuit in or on said silicon substrate, a dielectric layer over said silicon substrate, a first interconnecting structure over said silicon substrate and in said dielectric layer, wherein said first interconnecting structure is connected to said ESD circuit and to a first terminal of said driver, receiver or I/O circuit, and wherein said ESD circuit is connected, in parallel with said driver, receiver or I/O circuit, to said first interconnecting structure, a second interconnecting structure over said silicon substrate and in said dielectric layer, wherein said second interconnecting structure is connected to a second terminal of said driver, receiver or I/O circuit, a third interconnecting structure over said silicon substrate and in said dielectric layer, wherein said third interconnecting structure is connected to said first internal circuit, wherein said first, second and third interconnecting structures are formed by a process comprising a damascene process, an electroplating process and a CMP process, and a passivation layer over said dielectric layer; and

forming a fourth interconnecting structure over said passivation layer, wherein said second terminal is connected to said first internal circuit through, in sequence, said second interconnecting structure, said fourth interconnecting structure and said third interconnecting structure, and wherein said forming said fourth interconnecting structure comprises;

forming a first metal layer;

after said forming said first metal layer, forming a patterned photoresist layer;

after said forming said patterned photoresist layer, electroplating a second metal layer;

after said electroplating said second metal layer, removing said patterned photoresist layer; and

after said removing said patterned photoresist layer, etching said first metal layer.

2. The method of claim 1, wherein said depositing said first metal layer comprises sputtering process.

3. The method of claim 1 further comprising providing a second internal circuit in or on said silicon substrate, wherein said first internal circuit is connected to said second internal circuit through said third interconnecting structure, and wherein said second terminal is connected to said second internal circuit through, in sequence, said second interconnecting structure, said fourth interconnecting structure and said third interconnecting structure.

4. The method of claim 1 further comprising providing a second internal circuit in or on said silicon substrate, and a fifth interconnecting structure over said silicon substrate and in said dielectric layer, wherein said fifth interconnecting structure is connected to said second internal circuit, wherein said first internal circuit is connected to said second internal circuit through, in sequence, said third interconnecting structure, said fourth interconnecting structure and said fifth interconnecting structure, and wherein said second terminal is connected to said second internal circuit through, in sequence, said second interconnecting structure, said fourth interconnecting structure and said fifth interconnecting structure.

5. The method of claim 1, wherein an opening in said passivation layer exposing a pad has a diameter between 0.5 and 30 micrometers.

6. The method of claim 1, wherein said fourth interconnecting structure is for a signal stimuli.

7. The method of claim 1, wherein said fourth interconnecting structure is for a clock stimuli.

8. The method of claim 1, wherein said fourth interconnecting structure comprises an interconnect line having a thickness greater than 1 μ

m.

9. The method of claim 1, wherein there is no external point connected to said fourth interconnecting structure.

10. A method for fabricating a chip comprising:

providing a silicon substrate, multiple devices in and on said silicon substrate, a dielectric layer over said silicon substrate, a first interconnecting structure over said silicon substrate and in said dielectric layer, wherein said first interconnecting structure is formed by a process comprising a damascene process, an electroplating process and a CMP process, and a passivation layer over said dielectric layer, wherein said passivation layer comprises oxide and nitride; and

forming a second interconnecting structure over said passivation layer, wherein said forming said second interconnecting structure comprises;

forming a first metal layer;

after said forming said first metal layer, forming a patterned photoresist layer;

after said forming said patterned photoresist layer, electroplating a second metal layer;

after said electroplating said second metal layer, removing said patterned photoresist layer; and

after said removing said patterned photoresist layer, etching said first metal layer.

11. The method of claim 10, wherein said forming said first metal layer comprises a sputtering process.

12. The method of claim 10, wherein said multiple devices comprise a first internal circuit in or on said silicon substrate, and a second internal circuit in or on said silicon substrate, wherein said first internal circuit is connected to said second internal circuit through said second interconnecting structure.

13. The method of claim 10, wherein said multiple devices comprise a driver, receiver or I/O circuit in or on said silicon substrate, and an internal circuit in or on said silicon substrate, wherein a first terminal of said driver, receiver or I/O circuit is connected to said internal circuit through said second interconnecting structure.

14. The method of claim 13, wherein said multiple devices further comprise an ESD circuit in or on said silicon substrate, wherein said ESD circuit is connected to a second terminal of said driver, receiver or I/O circuit.

15. The method of claim 10, wherein an opening in said passivation layer exposing a pad has a diameter between 0.5 μ

m and 30 μ

m.

16. The method of claim 10, wherein said second interconnecting structure comprises an interconnect line having a thickness greater than 1 micrometer.

28. The method of claim 10, wherein said second interconnecting structure is for a signal stimuli.

29. The method of claim 10, wherein said second interconnecting structure is for a clock stimuli.

30. The method of claim 10, wherein said second interconnecting structure is for power distribution.

31. The method of claim 10, wherein said second interconnecting structure is for ground distribution.

17. A method for fabricating a chip comprising:

providing a silicon substrate, multiple devices in and on said silicon substrate, a first metallization structure over said silicon substrate, wherein said first metallization structure is formed by a process comprising a damascene process, an electroplating process and a CMP process, and a passivation layer over said first metallization structure, an opening in said passivation layer exposing a pad of said first metallization structure, wherein said passivation layer comprises oxide and nitride; and

forming a second metallization structure over said pad, wherein said forming said second metallization structure comprises;

forming a first metal layer;

after said forming said first metal layer, forming a patterned photoresist layer;

after said forming said patterned photoresist layer, electroplating a second metal layer;

after said electroplating said second metal layer, removing said patterned photoresist layer; and

after said removing said patterned photoresist layer, etching said first metal layer.

18. The method of claim 17, wherein said forming said first metal layer comprises a sputtering process.

19. The method of claim 17, wherein said multiple devices comprise a first internal circuit in or on said silicon substrate, and a second internal circuit in or on said silicon substrate, wherein said first internal circuit is connected to said second internal circuit through said second metallization structure.

20. The method of claim 17, wherein said multiple devices comprise a driver, receiver or I/O circuit in or on said silicon substrate, and an internal circuit in or on said silicon substrate, wherein a first terminal of said driver, receiver or I/O circuit is connected to said internal circuit through said second metallization structure.

21. The method of claim 20, wherein said multiple devices further comprise an ESD circuit in or on said silicon substrate, wherein said ESD circuit is connected to a second terminal of said driver, receiver or I/O circuit.

22. The method of claim 17, wherein said opening has a diameter between 0.5 μ

m and 30 μ

m.

23. The method of claim 17, wherein said second metallization structure comprises an interconnect line having a thickness greater than 1 micrometer.

24. The method of claim 17, wherein said second metallization structure is for a signal stimuli.

25. The method of claim 17, wherein said second metallization structure is for a clock stimuli.

26. The method of claim 17, wherein said second metallization structure is for ground distribution.

27. The method of claim 17, wherein said second metallization structure is for power distribution.