Microelectromechanical systems having trench isolated contacts, and methods for fabricating same

• US 7,352,040 B2
• Filed: 03/11/2005
• Issued: 04/01/2008
• Est. Priority Date: 06/04/2003
• Status: Active Grant

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Partridge, Aaron, Lutz, Markus, Kronmueller, Silvia
• Primary Examiner(s): TRAN, MINH LOAN
• Application Number:
  US11/078,253
• Publication Number:
  US 20050156260A1
• Time in Patent Office: 1,117 Days
• Field of Search: 257/790, 257415-419, 257/E29.324
• US Class Current: 257/419
• CPC Class Codes: B81B 2207/015 the micromechanical device and the control or processing electronics being integrated on the same substrate
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81C 1/00301 Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
• CPC Class Codes: B81C 2201/0176 Chemical vapour Deposition
• CPC Class Codes: B81C 2203/0136 Growing or depositing of a covering layer

Abstract

There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging and a contact area disposed at least partially outside the chamber. The contact area is electrically isolated from nearby electrically conducting regions by way of dielectric isolation trench that is disposed around the contact area. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

Claims

1. A microelectromechanical device comprising:

a chamber;

a mechanical structure, wherein at least a portion of the mechanical structure is disposed in the chamber;

a first encapsulation layer having at least one vent formed therein, wherein the first encapsulation layer is at least a portion of a wall of the chamber;

a second encapsulation layer, deposited over or in the at least one vent to seal the chamber, wherein the second encapsulation layer is a semiconductor material;

an insulation layer disposed on the second encapsulation layer;

a contact; and

a trench, disposed around at least a portion of the contact which is disposed outside the chamber, wherein the trench includes an insulating material disposed therein to electrically isolate the contact.

2. The microelectromechanical device of claim 1 wherein the second encapsulation layer includes polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.

3. The microelectromechanical device of claim 2 wherein the first encapsulation layer includes polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, germanium, silicon/germanium, gallium arsenide, silicon nitride or silicon carbide.

4. The microelectromechanical device of claim 1 wherein the insulating material is disposed on at least outer surfaces of the trench.

5. The microelectromechanical device of claim 4 wherein the trench includes a semiconductor material that is disposed in a portion of the trench.

6. The microelectromechanical device of claim 4 wherein the trench is disposed on an etch stop region.

7. The microelectromechanical device of claim 4 wherein the etch stop region is silicon nitride or silicon dioxide.

8. The microelectromechanical device of claim 4 wherein the insulating material is a silicon nitride or silicon dioxide.

9. The microelectromechanical device of claim 4 wherein the trench surrounds the contact.

10. A microelectromechanical device comprising:

a chamber;

a micromechanical structure, wherein at least a portion of the micromechanical structure is disposed in the chamber;

a first encapsulation layer having a plurality of vents formed therein, wherein the first encapsulation layer is at least a portion of a wall of the chamber;

a second encapsulation layer, disposed over or in the plurality of vents to seal the chamber, wherein the second encapsulation layer is a semiconductor material an electrical contact;

an insulation layer disposed on the second encapsulation layer; and

a trench, disposed around at least a portion of the electrical contact which is disposed outside the chamber, wherein the trench includes an insulating material disposed therein.

11. The microelectromechanical device of claim 10 wherein the second encapsulation layer includes polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.

12. The microelectromechanical device of claim 11 wherein the first encapsulation layer includes polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, germanium, silicon/germanium, gallium arsenide, silicon nitride or silicon carbide.

13. The microelectromechanical device of claim 10 wherein the insulation layer includes an opening over the contact and wherein the microelectromechanical device further includes a highly electrically conductive layer that is disposed in the opening, on the contact, and on at least a portion of the insulation layer.

14. The microelectromechanical device of claim 10 wherein a first portion of the first encapsulation layer is monocrystalline silicon and a second portion is polycrystalline, porous or amorphous silicon, and wherein the second portion of the first encapsulation layer is at least the portion of the wall of the chamber.

15. The microelectromechanical device of claim 14 wherein a portion of the second encapsulation layer that overlies the second portion of the first encapsulation layer is polycrystalline silicon.

16. The microelectromechanical device of claim 10 wherein the trench is disposed on an etch stop region.

17. The microelectromechanical device of claim 16 wherein the etch stop region is a silicon nitride or silicon dioxide and wherein the insulating material is a silicon nitride or silicon dioxide.

18. The microelectromechanical device of claim 10 wherein the trench surrounds the contact.

19. A microelectromechanical device comprising:

a chamber;

a micromechanical structure, wherein at least a portion of the micromechanical structure is disposed in the chamber;

a first encapsulation layer having a plurality of vents formed therein, wherein the first encapsulation layer is at least a portion of a wall of the chamber, and wherein the first encapsulation layer is a semiconductor material; and

a second encapsulation layer, disposed over or in the plurality of vents to seal the chamber, wherein the second encapsulation layer is a semiconductor material an electrical contact;

a trench, surrounding the electrical contact and having an insulating material disposed therein;

an insulation layer disposed on the second encapsulation layer wherein the insulation layer includes an opening over the contact; and

a highly electrically conductive layer is disposed in the opening, on the contact, and on at least a portion of the insulation layer.

20. The microelectromechanical device of claim 19 wherein:

the first encapsulation layer is polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, germanium, silicon/germanium, gallium arsenide, silicon nitride or silicon carbide; and

the second encapsulation layer is polycrystalline silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.

21. The microelectromechanical device of claim 19 wherein the insulation layer and the insulating material include same materials.