Method for process optimization and control by comparison between 2 or more measured scatterometry signals

• US 7,352,453 B2
• Filed: 01/17/2004
• Issued: 04/01/2008
• Est. Priority Date: 01/17/2003
• Status: Active Grant

• Current Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Original Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Inventors: Mieher, Walter D., Hankinson, Matt, Mack, Chris A.
• Primary Examiner(s): Toatley, Jr.; Gregory J.
• Assistant Examiner(s): VALENTIN, JUAN D
• Application Number:
  US10/760,149
• Publication Number:
  US 20040190008A1
• Time in Patent Office: 1,536 Days
• Field of Search: None
• US Class Current: 356/125
• CPC Class Codes: G01N 2021/8416 and process controlling, not otherwise provided for
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: G01N 21/47 Scattering, i.e. diffuse reflection G01N21/25, G01N21/41 take precedence G01N21/55 takes precedence
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 21/95607 using a comparative method
• CPC Class Codes: G03F 7/70483 Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
• CPC Class Codes: G03F 7/70533 Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
• CPC Class Codes: G03F 7/70558 Dose control, i.e. achievement of a desired dose
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• CPC Class Codes: G03F 7/70641 Focus
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for determining one or more process parameter settings of a photolithographic system is disclosed.

Claims

1. A method, comprising:

obtaining scatterometry signals by performing scatterometry measurements on a plurality of grating structures with different process responses, each grating structure having a first grating parameter and the grating structures having different values for the first grating parameter;

comparing scatterometry signals from said different grating structures in order to ascertain information about one or more process parameters used to form said grating structures; and

controlling said one or more process parameters based on said comparison, wherein the differences between process responses are attributable at least in part to the differences between the different values for the first grating parameters and wherein the different values for the first grating parameters are selected so as to cause different process responses under the same process parameters.

2. The method as recited in claim 1 wherein the step of comparing comprises:

determining the difference between scatterometry signals from said plurality of grating structures.

3. The method as recited in claim 2 wherein the step of comparing further comprises:

determining the effective values of said one or more process parameters by comparing the difference between scatterometry signals to calibration data.

4. The method as recited in claim 3 wherein the step of controlling comprises:

controlling said one or more process parameters in accordance with the effective values of said one or more process parameters.

5. The method as recited in claim 3 wherein the calibration data is in the form of one or more equations, graphs or libraries.

6. The method as recited in claim 3 wherein the calibration comprises:

performing scatterometry measurements on a plurality of sets of grating structures with different process responses for varying process conditions;

calculating the difference between the scatterometry signals for each set of grating structures;

mapping the differences between the scatterometry signals for each set of grating structures as a function of the varying process conditions.

7. The method as recited in claim 2 wherein the step of comparing further comprises:

determining if the difference between scatterometry signals is within a predetermined control limit.

8. The method as recited in claim 7 wherein the step of controlling comprises:

controlling said one or more process parameters in accordance with whether or not the difference between scatterometry signals is within said predetermined control limit.

9. The method as recited in claim 2 wherein the different scatterometry signals are subtracted from one another in order to produce one or more difference signals.

10. The method as recited in claim 9 wherein one or more difference properties are obtained from the one or more difference signals.

11. The method as recited in claim 10 wherein the one or more difference signals or some property thereof are compared to calibration data in order to determine the effective values of one or more process parameters.

12. The method as recited in claim 1 further comprising:

forming said plurality of grating structures with different process responses on a wafer with a mask.

13. The method as recited in claim 1 further comprising:

designing a mask with two or more masking structures, each of which is configured to produce a grating structure that responds differently to one or more process parameters.

14. A method for controlling one or more process parameters, comprising:

obtaining scatterometry signals for a first grating structure with a first process response and a second grating structure with a second process response different from the first process response, each of the grating structures being configured with different sensitivities to one or more process parameters which are desired to be controlled;

comparing scatterometry signals of the first and second grating structures, each of the first and second grating structures producing different scatterometry signals for a given set of process parameters; and

extracting information about one or more process parameters of the given set of process parameters based on said comparison, wherein the first grating structure and the second grating structure each has a first grating parameter and wherein a first value of the first grating structure'"'"'s first grating parameter differs from a second value of the second grating structure'"'"'s first grating parameter and wherein the difference between the first process response and the second process response is attributable at least in part to the difference between the first value and the second value.

32. The method of claim 14, wherein the first grating structure and the second grating structure were formed under substantially the same process parameters.

15. A method of determining optimal or best focus, the method comprising:

forming a target group at a plurality of focus settings, the target group containing a plurality of targets with different sensitivities to focus, each target having a first parameter and the plurality of targets having different values for the first parameter, wherein the differences in sensitivities are attributable at least in part to the differences between the different values and wherein the different values are selected so as to cause different process responses under the same process parameters;

obtaining scatterometry signals for each of the targets in the target groups;

calculating difference signals for each target group;

forming a relationship between the difference signal or a property of the difference signal to the focus settings; and

extracting optimal or best focus using the relationship.

16. The method as recited in claim 15 further comprising:

calculating a property for each of the difference signals.

17. The method as recited in claim 16 wherein the property is calculated using root mean squared difference.

18. A process control method, comprising:

measuring two or more measurable patterns that are configured with different process responses so as to produce different scatterometry signals for a given set of process conditions, each pattern having a first parameter and the measurable patterns having different values for the first parameter; and

extracting information about one or more process parameters associated with a photolithographic process by analyzing the differences between the different scatterometry signals from the measurable patterns for a given set of process conditions, wherein the differences between the process responses are attributable at least in part to the differences between the different values and wherein the different values are selected so as to cause different process responses under the same process conditions.

33. The method of claim 18, wherein some of the patterns are formed under substantially the same process conditions and some of the targets are formed under substantially different process conditions.

19. A target group, comprising:

a plurality of scatterometry targets configured to have different process responses, each target having a first parameter, the plurality of scatterometry targets having different values for the first parameter, the scatterometry targets with different process responses producing different scatterometry signals, the differences in the scatterometry signals being attributable at least in part to one or more process parameters used to create the scatterometry targets, wherein the differences between the process responses is attributable at least in part to the differences between the different values and wherein the different values are selected so as to cause different process responses under the same process conditions.

20. The target group as recited in claim 19 wherein the scatterometry targets are grating structures, a first grating structure including a first grating parameter having a first value formed from a first sensitivity to a process parameter, a second grating structure including the first grating parameter having a value formed from a second sensitivity to the process parameter.

21. The target group as recited in claim 20 wherein the second sensitivity is greater than or less than the first sensitivity.

22. The target group as recited in claim 20 wherein the grating structures are printed on the surface of a workpiece, the surface representing an exposed layer of photoresist, a partially developed layer of photoresist, a developed layer of photoresist, or an underlayer of the workpiece.

23. The target group as recited in claim 20 wherein the grating structures are located within the scribeline, device structure or within both the scribeline and the device structure.

24. The target group as recited in claim 20 wherein the grating structures are periodic in one direction or two directions.

25. The target group as recited in claim 20 wherein the first and second grating structures have the same pitch, but different linewidths or diameters.

26. The target group as recited in claim 20 wherein the grating structures are both positive tone or negative tone.

27. The target group as recited in claim 20 wherein at least one of the grating structures is a positive tone and the other is a negative tone.

28. The target group as recited in claim 20 wherein the first and second grating structures have the same pitch in both the x and y directions, but different optical proximity conections (OPC).

29. The target group as recited in claim 20 at least one of the grating structures includes segmented lines.

30. The target group as recited in claim 29 wherein the first and second grating structures have the same pitch, but different segment widths.

31. The target group as recited in claim 29 wherein the first and second grating structures have the same pitch, but different shape segments.