Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising:
- forming a peeling layer over a first substrate, with a top shape of the peeling layer including at least three sides;
forming a base insulating layer over the peeling layer and the first substrate, the base insulating layer covering all of the at least three sides of the peeling layer;
forming at least one thin film integrated circuit over the peeling layer with the base insulating layer interposed therebetween;
forming a protective layer covering the thin film integrated circuit;
exposing one of the sides of the peeling layer by removing the base insulating layer selectively, while leaving the other sides of the peeling layer covered by the base insulating layer;
etching the peeling layer; and
transferring the thin film integrated circuit to a second substrate,wherein the etching proceeds in one direction from the exposed side of peeling layer, andwherein an adhesive material is provided on the second substrate.
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Accused Products
Abstract
In the case where an integrated circuit formed of a thin film is formed over a substrate and peeled from the substrate, a fissure (also referred to as crack) is generated in the integrated circuit in some cases. The present invention is to restrain the generation of a fissure by fixing the proceeding direction of etching in one direction to make a peeled layer warp in one direction in accordance with the proceeding of etching. For example, the proceeding of etching can be controlled by utilizing the fact that a portion where a substrate is in contact with a base insulating layer is not etched in the case of patterning a peeling layer provided over the substrate, then forming the base insulating layer, and then fixing a peeled layer by the portion where the substrate is in contact with the base insulating layer.
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Citations
23 Claims
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1. A method for manufacturing a semiconductor device comprising:
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forming a peeling layer over a first substrate, with a top shape of the peeling layer including at least three sides; forming a base insulating layer over the peeling layer and the first substrate, the base insulating layer covering all of the at least three sides of the peeling layer; forming at least one thin film integrated circuit over the peeling layer with the base insulating layer interposed therebetween; forming a protective layer covering the thin film integrated circuit; exposing one of the sides of the peeling layer by removing the base insulating layer selectively, while leaving the other sides of the peeling layer covered by the base insulating layer; etching the peeling layer; and transferring the thin film integrated circuit to a second substrate, wherein the etching proceeds in one direction from the exposed side of peeling layer, and wherein an adhesive material is provided on the second substrate. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a semiconductor device comprising:
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forming a peeling layer over a first substrate, with the a top shape of the peeling layer including at least three sides; forming a base insulating layer over the peeling layer and the first substrate, the base insulating layer covering all of the at least three sides of the peeling layer; forming at least one thin film integrated circuit over the peeling layer with the base insulating layer interposed therebetween; forming a protective layer covering the thin film integrated circuit; exposing a first side and a second side of the peeling layer by removing the base insulating layer selectively, while leaving other of the at least three sides of the peeling layer covered by the base insulating layer; etching the peeling layers; and transferring the thin film integrated circuit to a second substrate, wherein the first side and the second side of the peeling layer are opposed to each other, wherein the etching proceeds in one direction from the first side and the second side of the peeling layer, and wherein an adhesive material is provided on the second substrate. - View Dependent Claims (6, 7, 8)
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9. A method for manufacturing a semiconductor device comprising:
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forming a peeling layer over a first substrate; forming at least a first peeling layer and a second peeling layer by removing the peeling layer selectively, with a top shape of each of the first peeling layer and the second peeling layer including at least three sides; forming a base insulating layer over the first peeling layer, the second peeling layer and the first substrate, with the base insulating layer covering all of the sides of the first peeling layer and the second peeling layer; forming a first thin film integrated circuit over the first peeling layer with the base insulating layer interposed therebetween and a second thin film integrated circuit over the second peeling layer with the base insulating layer interposed therebetween; forming a first protective layer covering the first thin film integrated circuit and a second protective layer covering the second thin film integrated circuit; exposing one of the sides of the first peeling layer and one of the sides of the second peeling layer by removing the base insulating layer selectively, while leaving the other sides of the first peeling layer and the other sides of the second peeling layer covered by the base insulating layer; etching the first and second peeling layers; and transferring the first and second thin film integrated circuits to a second substrate, wherein the side of the second peeling layer that is exposed is between the first and second thin film integrated circuits, wherein the etching proceeds in one direction from the exposed side of the first peeling layer and the exposed side of the second peeling layer, and wherein an adhesive material is provided on the second substrate. - View Dependent Claims (10, 11, 12, 13)
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14. A method for manufacturing a semiconductor device comprising:
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forming a peeling layer over a first substrate; forming at least a first peeling layer and a second peeling layer by removing the peeling layer selectively, with a top shape of each of the first peeling layer and the second peeling layer including at least three sides; forming a base insulating layer over the first peeling layer, the second peeling layer and the first substrate, with the base insulating layer covering all of the sides of the first peeling layer and the second peeling layer; forming a first thin film integrated circuit over the first peeling layer with the base insulating layer interposed therebetween and a second thin film integrated circuit over the second peeling layer with the base insulating layer interposed therebetween; forming a first protective layer covering the first thin film integrated circuit and a second protective layer covering the second thin film integrated circuit; exposing one of the sides of the first peeling layer and one of the sides of the second peeling layer by removing the base insulating layer selectively, while leaving the other sides of the first peeling layer and the other sides of the second peeling layer covered by the base insulating layer; etching the first and second peeling layers; and interposing the first and second thin film integrated circuits between a first film and a second film by thermocompressing, wherein the side of the second peeling layer that is exposed is between the first thin film integrated circuit and the second thin film integrated circuit, wherein the etching proceeds in one direction from the exposed side of the first peeling layer and the exposed side of the second peeling layer, and wherein an adhesive material is provided on the second substrate. - View Dependent Claims (15, 16, 17, 18)
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19. A method for manufacturing a semiconductor device comprising:
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forming a peeling layer over a first substrate, with a top shape of the peeling layer including at least three sides; forming a base insulating layer over the peeling layer, the base insulating layer covering all of the at least three sides of the peeling layer; forming at least first and second thin film integrated circuits over the peeling layer; forming a protective layer for covering the first and second thin film integrated circuits; exposing a first side and a second side of the peeling layer by selectively removing the base insulating layer, while leaving other of the at least three sides of the peeling layer covered by the base insulating layer; partially etching the peeling layer, so as to leave a part of the peeling layer between the first and second thin film integrated circuits; and transferring the first and second thin film integrated circuits to a second substrate, wherein an adhesive material is provided on the second substrate. - View Dependent Claims (20, 21, 22, 23)
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Specification