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Method for removal of pattern resist over patterned metal having an underlying spacer layer

  • US 7,354,865 B2
  • Filed: 12/31/2003
  • Issued: 04/08/2008
  • Est. Priority Date: 12/31/2003
  • Status: Active Grant
First Claim
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1. A method of removing pattern resist, comprising the steps of:

  • providing a wafer having an etched patterned layer and an overlying mask pattern resist outwardly from a spacer layer;

    cleaning the wafer with a develop solution;

    ashing the surface of the wafer;

    photochemically removing the pattern resist that remains after the cleaning and ashing steps; and

    selectively removing at least a majority of the spacer layer.

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