×

High-efficiency light-emitting element

  • US 7,355,210 B2
  • Filed: 02/21/2005
  • Issued: 04/08/2008
  • Est. Priority Date: 03/24/2004
  • Status: Active Grant
First Claim
Patent Images

1. A high-efficiency light-emitting element comprising:

  • a substrate;

    a first nitride semiconductor layer formed on and electrically isolated from the substrate;

    a nitride light-emitting layer formed on the first nitride semiconductor layer;

    a second nitride semiconductor layer formed on the nitride light-emitting layer comprising a p-type semiconductor layer; and

    a plurality of hexagonal-pyramid cavities extending downward from at least one of surfaces on the first nitride semiconductor layer and the second nitride semiconductor layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×