High-efficiency light-emitting element
First Claim
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1. A high-efficiency light-emitting element comprising:
- a substrate;
a first nitride semiconductor layer formed on and electrically isolated from the substrate;
a nitride light-emitting layer formed on the first nitride semiconductor layer;
a second nitride semiconductor layer formed on the nitride light-emitting layer comprising a p-type semiconductor layer; and
a plurality of hexagonal-pyramid cavities extending downward from at least one of surfaces on the first nitride semiconductor layer and the second nitride semiconductor layer.
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Abstract
A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the nitride light-emitting layer including a plurality of hexagonal-pyramid cavities on the surface of the second nitride semiconductor layer opposite to the nitride light-emitting layer.
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Citations
51 Claims
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1. A high-efficiency light-emitting element comprising:
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a substrate; a first nitride semiconductor layer formed on and electrically isolated from the substrate; a nitride light-emitting layer formed on the first nitride semiconductor layer; a second nitride semiconductor layer formed on the nitride light-emitting layer comprising a p-type semiconductor layer; and a plurality of hexagonal-pyramid cavities extending downward from at least one of surfaces on the first nitride semiconductor layer and the second nitride semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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39. A high-efficiency light-emitting element comprising:
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a substrate; a first nitride semiconductor layer formed on and electrically isolated from the substrate comprising; a first surface distant from the substrate; and a second surface distant from the substrate and comprising a plurality of hexagonal-pyramid cavities, wherein the hexagonal-pyramid cavity extends downward from the second surface of the first nitride semiconductor layer; a nitride light-emitting layer formed on the first surface; and a second nitride semiconductor layer formed on the nitride light-emitting layer. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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Specification