Memory devices with dual-sided capacitors
First Claim
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1. A memory device comprising:
- an array of memory cells, each memory cell of said array comprising a transistor and a capacitor, said capacitor comprising;
a dual-sided electrode comprising an oxide layer between two conductive layers, the two conductive layers each having a first surface abutting the oxide layer and an opposing second surface;
a dielectric layer in contact with the second surfaces of the two conductive layers of said dual-sided electrode; and
a conductive layer over said dielectric layer.
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Abstract
A dual-sided HSG capacitor and a method of fabrication are disclosed. A thin native oxide layer is formed between a doped polycrystalline layer and a layer of hemispherical grained polysilicon (HSG) as part of a dual-sided lower capacitor electrode. Prior to the dielectric formation, the lower capacitor electrode may be optionally annealed to improve capacitance.
12 Citations
33 Claims
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1. A memory device comprising:
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an array of memory cells, each memory cell of said array comprising a transistor and a capacitor, said capacitor comprising; a dual-sided electrode comprising an oxide layer between two conductive layers, the two conductive layers each having a first surface abutting the oxide layer and an opposing second surface; a dielectric layer in contact with the second surfaces of the two conductive layers of said dual-sided electrode; and a conductive layer over said dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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an electrical circuit formed over a semiconductor substrate, said electrical circuit comprising a capacitor, said capacitor further comprising a dual-sided capacitor electrode comprising; an annealed doped polycrystalline layer having HSG grains of a first thickness; a layer of hemispherical grained polysilicon having HSG grains of a second thickness; and an oxide layer between said annealed doped polycrystalline layer and said layer of hemispherical grained polysilicon. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A processor system comprising:
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a processor; and a memory coupled to said processor, at least one of said processor and said memory comprising a capacitor, said capacitor comprising; a dual-sided electrode comprising an oxide layer between and in contact with two different conductive layers, the two conductive layers each having a first surface abutting the oxide layer and an opposing second surface; a dielectric layer in contact with the second surfaces of the two conductive layers of said dual-sided electrode; and a conductive layer over said dielectric layer. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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25. An electronic system comprising:
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at least one electrical circuit containing a capacitor, said capacitor comprising;
a dual-sided electrode comprising an oxide layer between and in contact with two different conductive layers, the two conductive layers each having a first surface abutting the oxide layer and an opposing second surface;a dielectric layer in contact with the second surface of the two conductive layers of said dual-sided electrode; and a conductive layer over said dielectric layer. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33)
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Specification