Low power consumption MIS semiconductor device
First Claim
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1. A semiconductor device comprising:
- a logic gate constructed of an insulated gate field effect transistor having a first gate insulation film, and receiving a voltage of an internal power node as an operating power source voltage to operate, for processing a signal of a first amplitude;
a first switching transistor connected between said internal power node and a first power source node, having a second gate insulation film greater in thickness than said first gate insulation film, and responsive to a switch control signal of a second amplitude larger than said first amplitude to be selectively made conductive for electrically coupling said first power source node and said internal power node; and
a second switching transistor different in conductivity from said first switching transistor, connected between said internal power node and said first power source node, having a gate insulation film the same in thickness as said second gate insulation film thickness, and rendered selectively conductive in a common phase with said first switching transistor in response to said switch control signal.
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Abstract
A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized.
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Citations
7 Claims
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1. A semiconductor device comprising:
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a logic gate constructed of an insulated gate field effect transistor having a first gate insulation film, and receiving a voltage of an internal power node as an operating power source voltage to operate, for processing a signal of a first amplitude; a first switching transistor connected between said internal power node and a first power source node, having a second gate insulation film greater in thickness than said first gate insulation film, and responsive to a switch control signal of a second amplitude larger than said first amplitude to be selectively made conductive for electrically coupling said first power source node and said internal power node; and a second switching transistor different in conductivity from said first switching transistor, connected between said internal power node and said first power source node, having a gate insulation film the same in thickness as said second gate insulation film thickness, and rendered selectively conductive in a common phase with said first switching transistor in response to said switch control signal. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification