Method of forming a field effect transistor including depositing and removing insulative material effective to expose transistor gate conductive material but not transistor gate semiconductor material
First Claim
1. A method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material, the method comprising:
- forming transistor gate semiconductive material and conductive material which contacts the semiconductive material thereover into a gate line over a semiconductive material channel region, the gate line comprising semiconductive material sidewalls;
oxidizing the semiconductive material sidewalls of the gate line;
after the oxidizing, depositing insulative material over the gate line;
after the depositing, removing the insulative material effective to expose the transistor gate conductive material but not the transistor gate semiconductive material; and
after the removing, forming at least one of a conductive metal or metal compound in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed.
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Accused Products
Abstract
The invention includes methods of forming field effect transistors. In one implementation, a method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material includes forming transistor gate semiconductive material into a gate line over a semiconductive material channel region. The gate line includes semiconductive material sidewalls. The semiconductive material sidewalls of the gate line are oxidized. After the oxidizing, at least one of a conductive metal or metal compound is formed in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed.
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Citations
10 Claims
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1. A method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material, the method comprising:
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forming transistor gate semiconductive material and conductive material which contacts the semiconductive material thereover into a gate line over a semiconductive material channel region, the gate line comprising semiconductive material sidewalls; oxidizing the semiconductive material sidewalls of the gate line; after the oxidizing, depositing insulative material over the gate line; after the depositing, removing the insulative material effective to expose the transistor gate conductive material but not the transistor gate semiconductive material; and after the removing, forming at least one of a conductive metal or metal compound in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification
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- Resources
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Current AssigneeMicron Technology, Inc.
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Original AssigneeMicron Technology, Inc.
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InventorsBicksler, Andrew R., Sandhu, Sukesh
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Primary Examiner(s)PIZARRO CRESPO, MARCOS D
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Application NumberUS11/490,712Publication NumberTime in Patent Office635 DaysField of Search438257-267, 438584-596, 257/E21.404US Class Current438/265CPC Class CodesH01L 21/28247 passivation or protection o...H01L 29/40114 the electrodes comprising a...H01L 29/66825 with a floating gate H01L29...H01L 29/7881 Programmable transistors wi...
