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Method of forming a field effect transistor including depositing and removing insulative material effective to expose transistor gate conductive material but not transistor gate semiconductor material

  • US 7,358,139 B2
  • Filed: 07/20/2006
  • Issued: 04/15/2008
  • Est. Priority Date: 01/31/2002
  • Status: Expired due to Fees
First Claim
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1. A method of forming a field effect transistor having a gate comprising a conductive metal or metal compound received over conductively doped semiconductive material, the method comprising:

  • forming transistor gate semiconductive material and conductive material which contacts the semiconductive material thereover into a gate line over a semiconductive material channel region, the gate line comprising semiconductive material sidewalls;

    oxidizing the semiconductive material sidewalls of the gate line;

    after the oxidizing, depositing insulative material over the gate line;

    after the depositing, removing the insulative material effective to expose the transistor gate conductive material but not the transistor gate semiconductive material; and

    after the removing, forming at least one of a conductive metal or metal compound in electrical connection with the transistor gate semiconductive material to comprise a substantially coextensive elongated portion of a final construction of the gate line of the field effect transistor being formed.

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