Wafer bonding of thinned electronic materials and circuits to high performance substrate
First Claim
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1. A method of bonding a wafer to a substrate comprising the steps of:
- providing a wafer having a front surface and a back surface;
attaching the front surface of the wafer to a support;
thinning the wafer from the back surface;
bonding the back surface of the wafer to a substrate by direct wafer bonding with atom-to-atom bonding; and
removing the support from the front surface of the wafer;
wherein the substrate has a resistivity higher than the resistivity of the wafer.
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Abstract
A method of bonding a wafer to a substrate comprising the steps of: providing a wafer having a front surface and a back surface; attaching the front surface of the wafer to a support; thinning the wafer from the back surface; bonding the back surface of the wafer to a substrate using a thin bonding technique; and removing the support from the front surface of the wafer. A circuit comprising: a substrate; and a wafer; wherein the wafer is at most about 50 microns thick; wherein the wafer has a front surface comprising features; and wherein the wafer has a back surface bonded to the substrate using a thin bonding technique.
38 Citations
25 Claims
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1. A method of bonding a wafer to a substrate comprising the steps of:
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providing a wafer having a front surface and a back surface; attaching the front surface of the wafer to a support; thinning the wafer from the back surface; bonding the back surface of the wafer to a substrate by direct wafer bonding with atom-to-atom bonding; and removing the support from the front surface of the wafer; wherein the substrate has a resistivity higher than the resistivity of the wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification