Method for fabricating packaged die

• US 7,358,154 B2
• Filed: 11/17/2005
• Issued: 04/15/2008
• Est. Priority Date: 10/08/2001
• Status: Expired due to Fees

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Seng, Ho Kwok, Jeung, Boon Suan, Poo, Chia Yong, Loo, Neo Yong, Koon, Eng Meow, Kwang, Chua Swee, Waf, Low Siu, Yu, Chan Min, Leng, Ser Bok, Chung, So Chee
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US11/281,084
• Publication Number:
  US 20060084240A1
• Time in Patent Office: 880 Days
• Field of Search: 438/113, 438/460, 438/462, 257/E21.484
• US Class Current: 438/462
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2224/0231 Manufacturing methods of the redistribution layers
• CPC Class Codes: H01L 2224/02311 Additive methods
• CPC Class Codes: H01L 2224/02313 Subtractive methods
• CPC Class Codes: H01L 2224/02331 Multilayer structure
• CPC Class Codes: H01L 2224/02371 connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/02375 Top view
• CPC Class Codes: H01L 2224/02379 Fan-out arrangement
• CPC Class Codes: H01L 2224/0239 Material of the redistribution layers
• CPC Class Codes: H01L 2224/03 Manufacturing methods
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03452 Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/0361 Physical or chemical etching
• CPC Class Codes: H01L 2224/03622 using masks
• CPC Class Codes: H01L 2224/039 Methods of manufacturing bonding areas involving a specific sequence of method steps
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05569 the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/056 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/08237 : the bonding area connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/80357 : being flush with the surface
• CPC Class Codes: H01L 2224/804 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/80898 : Press-fitting, i.e. pushing the parts together and fastening by friction, e.g. by compression of one part against the other
• CPC Class Codes: H01L 2224/93 : Batch processes
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/08 : of an individual bonding area
• CPC Class Codes: H01L 24/80 : Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 24/93 : Batch processes
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/10156 : at the periphery
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H10B 99/22 : including field-effect components

Abstract

Methods for forming an edge contact on a die and edge contact structures are described. The edge contacts on the die do not increase the height of the die. The edge contacts are positioned on the periphery of a die. The edge contacts are positioned in the saw streets. Each edge contact is connected to one bond pad of each die adjacent the saw street. The edge contact is divided into contacts for each adjacent die when the dies are separated. In an embodiment, a recess is formed in the saw street. In an embodiment, the recess is formed by scribing the saw street with a mechanical cutter. The recess is patterned and contact material is deposited to form the edge contacts.

Claims

1. A method, comprising:

fabricating at least two dies on a wafer, wherein the at least two dies are joined at a saw street;

forming a recess in the saw street;

filling the recess with an electrically conducting material;

connecting a bond pad from at least one of the dies to the electrically conductive material with a metal on each die between the bond pad and the electrically conductive material; and

separating the at least two dies from each other along the saw street.

2. The method of claim 1, wherein the fabricating at least two dies includes fabricating circuits for a memory device on at least one of the dies.

3. The method of claim 1, wherein forming the recess includes sawing along the saw street to a depth of about half a height of the die.

4. The method of claim 1, wherein connecting the bond pad includes depositing a metal on the wafer between the bond pad and the electrically conductive material.

5. A method, comprising:

patterning a recess in a saw street intermediate adjacent dies in a wafer;

depositing an electrically conductive material in the recess to form an edge contact;

connecting a bond pad of both dies to the edge contact by forming a metal line on each die between the bond pad and the edge contact; and

separating the adjacent dies along the saw street such that each dies includes a part of the edge contact.

6. The method of claim 5, wherein pattering the recess includes masking the wafer such that the electrically conductive material is deposited only in the recess.

7. The method of claim 6, wherein the patterning includes masking the recess such that the electrically conductive material forms a plurality of individual edge contacts.

8. The method of claim 7, further comprising extending the recess the length of the saw street.

9. A method, comprising:

fabricating at least two dies on a wafer, wherein the at least two dies are joined at a saw street, wherein fabricating the dies includes fabricating a memory on at least one die;

forming a recess in the saw street;

filling the recess with an electrically conducting material;

connecting a bond pad from at least one of the dies to the electrically conductive material by forming a metal on each die between the bond pad and the electrically conductive material; and

separating the at least two dies from each other along the saw street.

10. The method of claim 9, wherein fabricating the dies includes fabricating a memory on at least one die includes fabricating at least one of DRAM, SRAM, SDRAM, EEPROM, and flash memory.

11. The method of claim 9, wherein forming the recess includes sawing along the saw street to a depth of about half a height of the die.

12. The method of claim 11, wherein connecting the bond pad includes depositing a metal on the wafer between the bond pad and the electrically conductive material.

13. A method of forming an electrical system, comprising:

forming a first circuit having first contacts, and

forming a die having an integrated circuit formed therein, wherein the die includes;

a main body including a top layer, a bottom layer, and a peripheral edge surface extending between the top layer and the bottom layer;

forming a bond pad on the main body;

forming an edge contact at the peripheral edge surface, the edge contacts being in electrical communication with the first contacts; and

connecting a line to the bond pad to the edge contact.

14. The method of claim 13, wherein forming the edge contacts includes directly physically contacting the first contacts.

15. The method of claim 13, wherein forming the first circuit includes fabricating a communication bus.

16. The method of claim 13, wherein forming the die includes forming the main body to a first height, and forming the edge contact to a second height less than the first height.

17. The method of claim 14, wherein forming the die includes fabricating a memory device.

18. The method of claim 17, wherein fabricating the memory device includes fabricating at least one of an SRAM, SDRAM, and flash memory.

19. A method of forming an electrical system, comprising:

forming a first circuit having first contacts, and

forming a die having an integrated circuit formed therein, wherein forming the die includes;

forming a main body to a first height and including a top layer, a bottom layer, and a peripheral edge surface extending between the top layer and the bottom layer;

forming a bond pad on the main body;

forming edge contacts to a second height essentially equal to the first height at the peripheral edge surface, the edge contacts being in electrical communication with the first contacts; and

connecting a line to the bond pad to the edge contact.

20. The method of claim 19, wherein the bond pad is formed at the top layer.

21. The method of claim 19, wherein the edge contact is formed beneath the top layer.

22. The method of claim 19, wherein the edge contact is formed above a bottom surface of the bottom layer such that the edge contact does not increase a height of the die.

23. The method of claim 22, wherein forming the edge contacts includes forming the edge contact to include at least one of copper, gold, or silver.

24. A method of forming an electrical system, comprising:

forming a first circuit having first contacts, and

forming a die having an integrated circuit formed therein, wherein forming the die includes;

forming a main body to a first height and including a top layer, a bottom layer, and a peripheral edge surface extending between the top layer and the bottom layer;

forming a bond pad on the main body at the top layer;

forming edge contacts to a second height essentially equal to the first height at the peripheral edge surface, the edge contacts being in electrical communication with the first contacts; and

connecting a line to the bond pad to the edge contact.