Method and apparatus for in-situ film stack processing

• US 7,358,192 B2
• Filed: 04/08/2004
• Issued: 04/15/2008
• Est. Priority Date: 04/08/2004
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Merry, Walter R., Shang, Quanyuan, White, John M.
• Primary Examiner(s): Deo; Duy-Vu N.
• Assistant Examiner(s): GEORGE, PATRICIA ANN
• Application Number:
  US10/821,723
• Publication Number:
  US 20050224181A1
• Time in Patent Office: 1,468 Days
• Field of Search: 438707- 9, 438/706, 156/345.11
• US Class Current: 438/706
• CPC Class Codes: H01J 2237/3325 large area
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01J 37/32788 for extracting the material from the process chamber

Abstract

Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of the film stack in a processing chamber to expose a portion of an underlying silicon layer, and etching a trench in the silicon layer without removing the substrate from the processing chamber. The invention is particularly useful for thin film transistor fabrication for flat panel displays.

Claims

1. A method for a processing film stack formed on a substrate, the film stack having at least a patterned photoresist layer having a thinner portion formed between thicker sections and disposed over an first metal layer, a first silicon layer underlying the first metal layer, a second silicon layer underlying the first silicon layer, and a second metal layer disposed between the second silicon layer and the substrate, wherein the thinner sections of the patterned photoresist layer is over the second metal layer, wherein the thickness difference between the thin and thick section is sufficient to leave the thicker section of the photoresist layer after the thinner section is removed by an ashing process, the method comprising:

etching a portion of the first metal layer in a processing chamber exposed by the patterned photoresist layer to expose a portion of the first silicon layer; and

etching the exposed portion of the first silicon layer in the processing chamber.

2. The method of claim 1 further comprising:

etching in the processing chamber a portion of the second silicon layer exposed by the etching of the first silicon layer.

3. The method of claim 2 further comprising:

exposing a portion of the first metal layer through the photoresist.

4. The method of claim 3, wherein the step of exposing the portion of the first metal layer through the photoresist further comprises:

ashing a portion of the photoresist.

5. The method of claim 3, wherein the step of exposing the portion of the first metal layer through the photoresist further comprises:

removing the thinner section of photoresist disposed between the thicker sections of photoresist.

6. The method of claim 3 further comprising:

etching the portion of the first metal layer exposed through the photoresist to expose a second portion of the first silicon layer.

7. The method of claim 6 further comprising:

etching through the second portion of the first silicon layer to expose a second portion of the second silicon layer; and

etching a channel in the second silicon layer.

8. The method of claim 6, wherein the step of etching the channel further comprises:

leaving a strip of the second silicon layer between the channel and the second metal layer.

9. The method of claim 4, wherein the step of ashing is performed in the processing chamber.

10. The method of claim 1, wherein the step of etching the first metal layer further comprises:

providing a first process gas energized by a remote plasma source to the processing chamber; and

providing a second process gas to the processing chamber.

11. The method of claim 10, wherein the step of etching the first metal layer further comprises:

biasing the gases provided to the processing chamber with an RF power source.

12. The method of claim 11, wherein the step of biasing further comprises:

applying RF power to at least one of a gas distribution plate or a substrate support disposed in the chamber body.

13. The method of claim 10, wherein the first process gas is BCI₃ and the second process gas is a chlorine comprising gas.

14. The method of claim 1, wherein the step of etching the first silicon layer further comprises:

providing a first process gas energized by a remote plasma source to the processing chamber; and

providing a second process gas to the processing chamber.

15. The method of claim 14, wherein the step of etching the first silicon layer further comprises:

biasing the gases provided to the processing chamber with an RF power source.

16. The method of claim 15, wherein the step of biasing further comprises:

applying RF power to at least one of a gas distribution plate or a substrate support disposed in the chamber body.

17. The method of claim 14, wherein the first process gas is SF₆ and the second process gas is O₂.

18. The method of claim 14, wherein the first process gas is NF₃ and the second process gas is O₂.

19. The method of claim 7 further comprising:

removing the photoresist from the film stack by ashing; and

removing etch residues from the ashed filmstack.

20. The method of claim 19, wherein the step of removing etch residues further comprises:

transferring the substrate to another processing station within a cluster tool having the processing chamber coupled thereto.

21. The method of claim 19 further comprising:

deposing a passivation layer on the ashed film stack after residue removal.

22. The method of claim 21, wherein the step of depositing further comprises:

transferring the substrate to a deposition chamber within a cluster tool having the processing chamber coupled thereto.

23. The method of claim 21, wherein the step of depositing further comprises:

depositing the passivation layer in the processing chamber wherein the film stack was etched.

24. The method of claim 19, wherein the step of ashing occurs in the processing chamber.

25. The method of claim 19, wherein the step of removing etch residues further comprises:

transferring the substrate to a residual removal station coupled to a factory interface.

26. The method of claim 25 further comprising:

depositing a passivation layer in a station coupled to the factory interface.

31. The method of claim 25 further comprising:

depositing a dielectric material on the substrate without removing the substrate from the cluster tool.

27. A method in-situ etching of silicon and metal layers of a film stack, comprising:

etching an upper metal layer of the film stack in a processing chamber to expose a portion of an underlying silicon layer; and

etching a trench in the silicon layer without removing the substrate from the processing chamber.

28. The method of claim 27, wherein the step of etching the upper metal layer and the silicon layer further comprises:

using a photoresist mask to pattern the etching.

29. The method of claim 27 further comprising:

ashing a photoresist layer disposed on the first metal layer without removing the substrate from a cluster tool having the processing chamber coupled thereto.

30. The method of claim 29 further comprising:

removing etch residues from the substrate without removing the substrate from the cluster tool.