Quantum dots of group IV semiconductor materials
First Claim
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1. A quantum dot comprising:
- a) a core that is substantially crystalline and including Ge;
b) a shell that is inorganic and substantially noncrystalline and including GeOn with n between approximately 1.5 and 2, said shell surrounding said core and having a thickness greater than one monolayer of GeOn and up to ten monolayers of GeOn; and
c) at least one surface ligand coupled to said shell,said quantum dot being substantially defect free such that said quantum dot exhibits photoluminescence with a quantum efficiency that is at least 40 percent.
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Abstract
The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell surrounding the core. The quantum dot is substantially defect free such that the quantum dot exhibits photoluminescence with a quantum efficiency that is greater than 10 percent.
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Citations
23 Claims
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1. A quantum dot comprising:
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a) a core that is substantially crystalline and including Ge; b) a shell that is inorganic and substantially noncrystalline and including GeOn with n between approximately 1.5 and 2, said shell surrounding said core and having a thickness greater than one monolayer of GeOn and up to ten monolayers of GeOn; and c) at least one surface ligand coupled to said shell, said quantum dot being substantially defect free such that said quantum dot exhibits photoluminescence with a quantum efficiency that is at least 40 percent. - View Dependent Claims (2, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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3. A population of quantum dots, comprising:
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a plurality of quantum dots that each includes; a) a core that is substantially crystalline and including Ge; b) a ligand layer surrounding said core, said ligand layer including a plurality of surface ligands; and c) a shell positioned between said core and said ligand layer and surrounding said core, said shell being inorganic and substantially noncrystalline and including GeOn with n being between approximately 1.5 and 2, said shell having a thickness greater than one monolayer of GeOn and up to ten monolayers of GeOn, said plurality of quantum dots being monodispersed with respect to sizes of said plurality of quantum dots, said plurality of quantum dots being substantially defect free such that said plurality of quantum dots exhibits photoluminescence with a quantum efficiency that is greater than 10 percent. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification