Method of peeling off and method of manufacturing semiconductor device
First Claim
1. A method for peeling comprising the steps of:
- forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate;
heating at 500°
C. or higher the multilayer so that the second material layer has a compressive stress; and
peeling the second material layer from the first material layer and the substrate after the heating step,wherein the second material layer has the compressive stress in a range of −
1 to −
1×
1010 Dyne/cm2 before the peeling step.
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Accused Products
Abstract
The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the invention aims to provide a lightweight semiconductor device by sticking a peeled off layer to a variety of substrates and its manufacturing method. Especially, the invention aims to provide a lightweight semiconductor device by sticking a variety of elements such as TFT to a flexible film and its manufacturing method. Even in the case a first material layer 11 is formed on a substrate and a second material layer 12 is formed adjacently to the foregoing first material layer 11, and further, layered film formation, heating treatment at 500° C. or higher or laser beam radiating treatment is carried out, if the first material layer has a tensile stress before the peeling and the second material layer has a compressive stress, excellent separation can easily be carried out by physical means in the interlayer or interface of the second material layer 12.
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Citations
34 Claims
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1. A method for peeling comprising the steps of:
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forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate; heating at 500°
C. or higher the multilayer so that the second material layer has a compressive stress; andpeeling the second material layer from the first material layer and the substrate after the heating step, wherein the second material layer has the compressive stress in a range of −
1 to −
1×
1010 Dyne/cm2 before the peeling step. - View Dependent Claims (2, 3, 4, 5)
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6. A method for peeling comprising the steps of:
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forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate; radiating a laser beam to the multilayer so that the second material layer has a compressive stress; and peeling the second material layer from the first material layer and the substrate after the radiating step, wherein the second material layer has the compressive stress in a range of −
1 to −
1×
1010 Dyne/cm2 before the peeling step. - View Dependent Claims (7, 8, 9, 10)
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11. A method for peeling comprising the steps of:
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forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate; forming an underlying insulating layer on the multilayer; forming a semiconductor layer having an amorphous structure on the underlying insulating layer; heating the multilayer, the underlying insulating layer and the semiconductor layer so that the second material layer has a compressive stress; and peeling the second material layer, the underlying insulating layer and the semiconductor layer from the first material layer and the substrate after the heating step, wherein the second material layer has the compressive stress in a range of −
1 to −
1×
1010 Dyne/cm2 before the peeling step. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method for peeling comprising the steps of:
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forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate; forming an underlying insulating layer on the multilayer; forming a semiconductor layer having an amorphous structure on the underlying insulating layer; radiating a laser light to the multilayer, the underlying insulating layer and the semiconductor layer so that the second material layer has a compressive stress; and peeling the second material layer, the underlying insulating layer and the semiconductor layer from the first material layer and the substrate after the radiating step, wherein the second material layer has the compressive stress in a range of −
1 to −
1×
1010 Dyne/cm2 before the peeling step. - View Dependent Claims (18, 19, 20, 21, 22)
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23. A method for peeling comprising the steps of:
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forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate; heating the multilayer so that the second material layer has a compressive stress; sticking a supporting body to the multilayer; and peeling the second material layer and the supporting body from the first material layer and the substrate after the heating step, wherein the second material layer has the compressive stress in a range of −
1 to −
1×
1010 Dyne/cm2 before the peeling step. - View Dependent Claims (24, 25, 26, 27, 28)
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29. A method for peeling comprising the steps of:
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forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate; radiating a laser light to the multilayer so that the second material layer has a compressive stress; sticking a supporting body to the multilayer; and peeling the second material layer and the supporting body from the first material layer and the substrate after the radiating step, wherein the second material layer has the compressive stress in a range of −
1 to −
1×
1010 Dyne/cm2 before the peeling step. - View Dependent Claims (30, 31, 32, 33, 34)
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Specification