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RF semiconductor devices and methods for fabricating the same

  • US 7,361,583 B2
  • Filed: 07/25/2003
  • Issued: 04/22/2008
  • Est. Priority Date: 07/26/2002
  • Status: Expired due to Term
First Claim
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1. A method for fabricating an RF semiconductor device comprising:

  • forming a trench to define an active region and an element isolation region in a semiconductor substrate;

    forming a plurality of gate lines within the active region of the semiconductor substrate, the plurality of gate lines running perpendicularly to the trench and not extending over a center of the trench;

    forming an insulating layer on the plurality of gate lines and the semiconductor substrate;

    forming contact holes in the insulating layer over the active region using a single pattern, wherein a first group of the contact holes exposes portions of the gate lines and a second group of the contact holes exposes portions of the substrate in the active region;

    forming contact plugs in each of the contact holes; and

    forming a conductive pattern layer over the insulating layer that is electrically connected with the contact plugs.

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