Luminescent ceramic for a light emitting device
First Claim
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1. A structure comprising:
- a semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region; and
a first ceramic layer disposed in a path of light emitted by the light emitting layer, the first ceramic layer comprising a wavelength converting material, wherein the first ceramic layer is a solid agglomerate of phosphor particles, substantially free of binder material;
wherein the semiconductor light emitting device is attached to a host substrate, and the first ceramic layer is attached to a surface of the semiconductor light emitting device opposite the host substrate.
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Abstract
A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
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Citations
25 Claims
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1. A structure comprising:
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a semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region; and a first ceramic layer disposed in a path of light emitted by the light emitting layer, the first ceramic layer comprising a wavelength converting material, wherein the first ceramic layer is a solid agglomerate of phosphor particles, substantially free of binder material; wherein the semiconductor light emitting device is attached to a host substrate, and the first ceramic layer is attached to a surface of the semiconductor light emitting device opposite the host substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16, 17, 18, 19, 20, 21)
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15. A structure comprising:
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a semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region; and a first ceramic layer disposed in a path of light emitted by the light emitting layer, the first ceramic layer comprising a wavelength converting material, wherein the first ceramic layer is a solid agglomerate of phosphor particles, substantially free of binder material; wherein the semiconductor light emitting device comprises a growth substrate, and the first ceramic layer is attached to the growth substrate. - View Dependent Claims (22, 23, 24)
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25. A structure comprising:
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a ceramic layer comprising a wavelength converting material, wherein the ceramic layer is a solid agglomerate of phosphor particles, substantially free of binder material; and a III-nitride structure grown over the ceramic layer, the III-nitride structure including a light emitting layer disposed between an n-type region and a p-type region.
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Specification