Integrated circuits with persistent data storage

• US 7,364,084 B2
• Filed: 06/14/2005
• Issued: 04/29/2008
• Est. Priority Date: 05/31/2001
• Status: Expired due to Term

• Current Assignee: RUIZHANG TECHNOLOGY LIMITED COMPANY
• Original Assignee: Alien Technology Corporation
• Inventors: Stewart, Roger G., Rolin, John
• Primary Examiner(s): Kim, Ahshik
• Application Number:
  US11/153,030
• Publication Number:
  US 20050242196A1
• Time in Patent Office: 1,050 Days
• Field of Search: 235/487, 235/492, 235/375, 235/451, 327/143, 327/278, 340/10.4, 340/10.41
• US Class Current: 235/487
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/07381 with deactivation or otherwise incapacitation of at least a part of the circuit upon detected tampering

Abstract

The circuitry introduced in this invention selectively slows down the functioning of an electronic circuit by maintaining a particular state for a prolonged period of time. This circuitry is used not only to achieve the desired effect in maintaining security from electronic thieves trying to circumvent codes but also in other applications such as enabling a circuit to continue to function in the event of a brief loss of power. For example, in an RFID system, if a reader is frequency hopping, a tag loses power for as long as about 400 milliseconds when the reader changes to other frequencies. In a preferred embodiment, the disclosed circuitry is used in conjunction with a destruct sequence.

Claims

1. A one shot circuit having a timing interval that is maintained constant independent of power fluctuations that occur during the timing interval, wherein the circuit forms a portion of an REID device, and wherein the circuit comprises:

a transistor;

a dielectric charge storage portion coupled to the transistor to store a dielectric capacitance; and

ajunction capacitance portion coupled to the transistor to store a junction capacitance;

wherein the dielectric capacitance is at least 10 times greater than the junction capacitance.

2. The circuit as recited in claim 1, wherein the timing interval is greater than one second at room temperature.

3. The circuit as recited in claim 1, wherein the timing interval is 1-5 seconds.

4. The circuit as recited in claim 1, wherein the RFID device is a passive RFID tag.

5. The circuit as recited in claim 1, wherein the dielectric capacitance is at least 100 times greater than the junction capacitance.

6. The circuit as recited in claim 1, wherein a time constant of the dielectric charge storage portion is greater than 100 seconds, wherein a time constant of the junction capacitance portion is less than 1 second.

7. The circuit as recited in claim 1, wherein the charge storage portion is a dielectric capacitor.

8. The circuit as recited in claim 1, wherein the transistor is a PMOS transistor.

9. The circuit as recited in claim 1, wherein the transistor is an NMOS transistor.

10. A one-shot circuit having a timing interval of greater than one second at room termperature independent of power fluctuations, wherein the circuit forms a portion of an RFID device, and wherein the circuit comprises:

a transistor;

a dielectric charge storage portion coupled to the transistor to store a dielectric capacitance; and

a junction capacitance portion coupled to the transistor to store a junction capacitance;

wherein the dielectric capacitance is at least 10 times greater than the junction capacitance.

11. The circuit as recited in claim 10, wherein room temperature is between approximately 10 degrees Celsius and approximately 30 degrees Celsius.

12. The circuit as recited in claim 11, wherein the RFID device is a passive RFID tag.

13. The circuit as recited in claim 11, wherein the dielectric capacitance is at least 100 times greater than the junction capacitance.

14. The circuit as recited in claim 11, wherein a time constant of the dielectric charge storage portion is greater than 100 seconds, wherein a time constant of the junction capacitance portion is less than 1 second.

15. The circuit as recited in claim 11, wherein the charge storage portion is a dielectric capacitor.

16. The circuit as recited in claim 11, wherein the transistor is a PMOS transistor.

17. The circuit as recited in claim 11, wherein the transistor is an NMOS transistor.

18. A one shot circuit having a timing interval that is maintained constant independent of power fluctuations that occur during the timing interval, wherein the circuit comprises:

a transistor;

a dielectric charge storage portion coupled to the transistor to store a dielectric capacitance; and

a junction capacitance portion coupled to the transistor to store a junction capacitance;

wherein the dielectric capacitance is at least 10 times greater than the junction capacitance.

19. A one-shot circuit having a timing interval of greater than one second at room temperature independent of power fluctuations, wherein the circuit comprises:

a transistor;

a dielectric charge storage portion coupled to the transistor to store a dielectric capacitance; and

a junction capacitance portion coupled to the transistor to store a junction capacitance;

wherein the dielectric capacitance is at least 10 times greater than the junction capacitance.