Method for manufacturing semiconductor devices
First Claim
1. A method for manufacturing semiconductor devices comprising:
- a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a plasma etching system,wherein the interlayer insulating layer is etched with a gas mixture containing BCl3, Ar, and CH4 or He,wherein the interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100°
C. to 200°
C., andwherein the interlayer insulating layer and the polysilicon or SiO2 layer are separately etched in different chambers.
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Abstract
A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl3, Ar, and CH4 or He. The gas mixture further contains Cl2. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100° C. to 200° C. The interlayer insulating layer and the polysilicon or SiO2 layer are separately etched in different chambers.
158 Citations
4 Claims
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1. A method for manufacturing semiconductor devices comprising:
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a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a plasma etching system, wherein the interlayer insulating layer is etched with a gas mixture containing BCl3, Ar, and CH4 or He, wherein the interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100°
C. to 200°
C., andwherein the interlayer insulating layer and the polysilicon or SiO2 layer are separately etched in different chambers. - View Dependent Claims (2, 3, 4)
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Specification