×

Method for manufacturing semiconductor devices

  • US 7,364,956 B2
  • Filed: 08/24/2005
  • Issued: 04/29/2008
  • Est. Priority Date: 07/26/2005
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method for manufacturing semiconductor devices comprising:

  • a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a plasma etching system,wherein the interlayer insulating layer is etched with a gas mixture containing BCl3, Ar, and CH4 or He,wherein the interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100°

    C. to 200°

    C., andwherein the interlayer insulating layer and the polysilicon or SiO2 layer are separately etched in different chambers.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×