Sensor semiconductor device with sensor chip

• US 7,365,364 B2
• Filed: 08/30/2005
• Issued: 04/29/2008
• Est. Priority Date: 05/27/2005
• Status: Expired due to Fees

• Current Assignee: Siliconware Precision Industries Co., Ltd.
• Original Assignee: Siliconware Precision Industries Co., Ltd.
• Inventors: Chang, Cheng-Yi, Huang, Chih-Ming, Huang, Chien-Ping
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US11/162,135
• Publication Number:
  US 20060267125A1
• Time in Patent Office: 973 Days
• Field of Search: 257/81, 257/82, 257/98, 257/99, 257432-434, 257/680, 438/22, 438/24, 438/48, 438/64, 438/65
• US Class Current: 257/81
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00

Abstract

A sensor semiconductor device and a method for fabricating the same are proposed. A sensor chip is mounted on a substrate, and a dielectric layer and a circuit layer are formed on the substrate, wherein the circuit layer is electrically connected to the substrate and the sensor chip. The dielectric layer is formed with an opening for exposing a sensor region of the sensor chip. A light-penetrable lid covers the opening of the dielectric layer, such that light is able to penetrate the light-penetrable lid to reach the sensor region and activate the sensor chip. The sensor chip can be electrically connected to an external device via a plurality of solder balls implanted on a surface of the substrate not for mounting the sensor chip. Therefore, the sensor semiconductor device is fabricated in a cost-effective manner, and circuit cracking and a know good die (KGD) problem are prevented.

Claims

1. A sensor semiconductor device, comprising:

at least one substrate having a first surface and a corresponding second surface, wherein the first surface of the substrate is formed with a plurality of connecting pads;

a sensor chip having an active surface and a corresponding non-active surface, wherein the active surface of the sensor chip is formed with a sensor region and a plurality of electrode pads, and the non-active surface of the sensor chip is mounted on the first surface of the substrate;

a dielectric layer applied on the substrate and the sensor chip, wherein the dielectric layer is formed with a plurality of first openings corresponding in position to the connecting pads of the substrate and the electrode pads of the sensor chip and a second opening corresponding in position to the sensor region of the sensor chip;

a circuit layer formed on the dielectric layer, and electrically connected to the connecting pads of the substrate and the electrode pads of the sensor chip; and

a light-penetrable lid for covering the second opening of the dielectric layer corresponding to the sensor region of the sensor chip.

2. The sensor semiconductor device of claim 1, further comprising a plurality of solder balls implanted on the second surface of the substrate.

3. The sensor semiconductor device of claim 1, further comprising a circuit build-up structure formed on the circuit layer that is electrically connected to the connecting pads of the substrate and the electrode pads of the sensor chip.

4. The sensor semiconductor device of claim 1, wherein a chamfer is formed on a peripheral area of the active surface of the sensor chip.

5. The sensor semiconductor device of claim 1, wherein the sensor chip is thinned.

6. The sensor semiconductor device of claim 1, wherein a good die is selected as the sensor chip.

7. The sensor semiconductor device of claim 1, wherein the at least one substrate comprises at least one single substrate, a matrix of substrates, or a strip of substrates.

8. The sensor semiconductor device of claim 1, which is a chip-scale packaged sensor semiconductor device.