Non-conformable masks and methods and apparatus for forming three-dimensional structures

• US 7,368,044 B2
• Filed: 11/26/2003
• Issued: 05/06/2008
• Est. Priority Date: 11/26/2002
• Status: Active Grant

• Current Assignee: Microfabrica Incorporated (Technoprobe S.P.A.)
• Original Assignee: Microfabrica Incorporated (Technoprobe S.P.A.)
• Inventors: Smalley, Dennis R., Cohen, Adam L.
• Primary Examiner(s): Wong; Edna
• Application Number:
  US10/724,513
• Publication Number:
  US 20040147124A1
• Time in Patent Office: 1,623 Days
• Field of Search: 205/118, 205/135, 205/666
• US Class Current: 205/118
• CPC Class Codes: B33Y 10/00 Processes of additive manufacturing
• CPC Class Codes: B81C 1/00182 Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer

Abstract

Electrochemical Fabrication techniques are used to modify substrates or to form multilayer structures (e.g. components or devices) from a plurality of overlaying and adhered layers. Masks are used to selectively etch or deposit material. Some masks may be of the contact type and may be formed of multiple materials some of which may be support materials, some of which may be mating materials for contacting a substrate and some may be intermediate materials. In some embodiments the contact masks may have conformable contact surfaces (i.e. surfaces with sufficient flexibility or deformability that they can substantially conform to surface of the substrate to form a seal with it) or they may have semi-rigid or even rigid surfaces. In embodiments where masks are used for selective deposition operations, etching operations may be performed after deposition to remove flash deposits (thin undesired deposits from areas that were intended to be masked).

Claims

1. A process for forming a multilayer three-dimensional structure, comprising:

(a) forming a first layer comprising at least one structural material and at least one sacrificial material on a substrate that may include one or more previously formed layers each formed from the at least one structural material and the at least one sacrificial material; and

(b) repeating the forming of (a) one or more times to form at least one subsequent layer on and adhered to the first layer or on and adhered to a previously formed subsequent layer to build up a three-dimensional structure from a plurality of adhered layers;

wherein the forming of at least one layer of the plurality of adhered layers, comprises;

(1) supplying a mask that comprises at least one void and at least one surrounding protrusion of material;

(2) bringing the at least one protrusion of the mask into proximity to or into contact with the substrate or a selected previously formed layer so as to form at least one electrochemical process pocket having a desired registration with respect to the substrate or the selected previously formed layer, and providing a desired electrolyte within the at least one electrochemical process pocket; and

(3) applying a desired electrical activation between at least one electrode, that may be part of the mask or separate therefrom, and the substrate or the selected previously formed layer, such that a desired modification of the substrate or the selected previously formed layer occurs during the forming of the at least one layer,

wherein the mask comprises at least two different materials where the material that is brought in proximity to or in contact with the substrate or the selected previously formed layer is less conformable than another material from which the mask is comprised.

2. The process of claim 1 wherein the mask is an electrodeless mask.

3. The process of claim 1 wherein the mask comprises an electrode that is used for deposition or etching.

4. The process of claim 1 wherein the desired modification comprises a selective deposition of the at least one structural material or the at least one sacrificial material.

5. The process of claim 4 additionally comprising a planarization of the selective deposition of the at least one structural material or the at least one sacrificial material.

6. The process of claim 4, wherein the mask is used to selectively deposit the at least one structural material or the at least one sacrificial material and an etching operation is performed after the deposition to reduce the presence of any unwanted depositions.

7. The process of claim 1 wherein the desired modification operates on the selected previously formed layer and where the desired modification comprises a selective etching of the at least one structural material or at least one sacrificial material which forms part of the selected previously formed layer.

8. The process of claim 7 additionally comprising a planarization operation.