Light generating semiconductor device and method of making the same
First Claim
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1. A method of making a semiconductor light generating device, the method comprising the steps of:
- forming a GaN-based semiconductor portion on a AlXGa1-XN (0 ≦
×
≦
1) substrate, the GaN-based semiconductor portion including a light generating film, the light generating film having a threading dislocation density smaller than 1×
107 cm−
2;
forming an electrode film on the GaN-based semiconductor portion;
bonding a conductive substrate to a surface of the electrode film using a conductive adhesive; and
after bonding the conductive substrate, separating one of the AlXGa1-XN substrate and the GaN-based semiconductor portion from the other,wherein the light generating film is only made of material having a bandgap energy greater than material of the substrate.
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Abstract
In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor film. A conductive substrate is bonded to a surface of the electrode film using a conductive adhesive. After bonding the conductive substrate, the GaN or AlGaN substrate is separated from the GaN-based semiconductor portion to form the semiconductor light generating device.
17 Citations
15 Claims
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1. A method of making a semiconductor light generating device, the method comprising the steps of:
-
forming a GaN-based semiconductor portion on a AlXGa1-XN (0 ≦
×
≦
1) substrate, the GaN-based semiconductor portion including a light generating film, the light generating film having a threading dislocation density smaller than 1×
107 cm−
2;forming an electrode film on the GaN-based semiconductor portion; bonding a conductive substrate to a surface of the electrode film using a conductive adhesive; and after bonding the conductive substrate, separating one of the AlXGa1-XN substrate and the GaN-based semiconductor portion from the other, wherein the light generating film is only made of material having a bandgap energy greater than material of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of making a semiconductor light generating device, the method comprising the steps of:
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forming a sacrificial film on a GaN substrate, the sacrificial film being made of a first material, the first material having a band gap smaller than the material of the substrate; forming a GaN-based semiconductor portion on the GaN substrate, the GaN-based semiconductor portion including a light generating film; forming an electrode film on the GaN-based semiconductor portion; bonding a conductive substrate to a surface of the electrode film using a conductive adhesive; and after bonding the conductive substrate, separating one of the GaN substrate and the GaN-based semiconductor portion from the other, wherein the sacrificial film is made of nitride compound semiconductor containing indium and wherein separating one of the GaN substrate and the GaN-based semiconductor film from the other includes a step of irradiating the sacrificial film with light to perform lift-off of one of the GaN substrate and the GaN-based semiconductor portion from the other, the light including a wavelength component corresponding to a energy smaller than a bandgap energy of GaN semiconductor.
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15. A method of making a semiconductor light generating device, the method comprising the steps of:
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forming a sacrificial film on a AlXGa1-XN substrate (0 <
×
≦
1), the sacrificial layer being made of a first material, the first material having a bandgap smaller than material of the AlXGa1-XN substrate;forming a GaN-based semiconductor portion on the AlXGa1-XN substrate, the GaN-based semiconductor portion including a light generating film; forming an electrode film on the GaN-based semiconductor portion; bonding a conductive substrate to a surface of the electrode film using a conductive adhesive; and after bonding the conductive substrate, separating one of the AlXGa1-XN substrate and the GaN-based semiconductor portion from the other, wherein the sacrificial layer is made of nitride compound semiconductor containing indium and wherein separating one of the AlXGa1-XN substrate and the GaN-based semiconductor portion from the other includes a step of irradiating the sacrificial film with light to perform lift-off of one of the AlXGa1-XN substrate and the GaN-based semiconductor portion from the other, the light including a wavelength component corresponding to a energy smaller than a bandgap energy of material of the substrate.
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Specification