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Method for producing field effect device that includes epitaxially growing SiGe source/drain regions laterally from a silicon body

  • US 7,368,358 B2
  • Filed: 02/02/2006
  • Issued: 05/06/2008
  • Est. Priority Date: 10/31/2003
  • Status: Active Grant
First Claim
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1. A method for producing a field effect device, comprising:

  • providing a body for said device, wherein said body is a monocrystalline Si layer on an insulator;

    in source/drain regions of said body, recessing said body all the way to said insulator;

    fabricating a source and a drain for said device, wherein said source and said drain are grown epitaxially in a lateral direction in said source/drain regions by using a lateral seeding from said body, wherein said source and said drain are selected to consist essentially of SiGe, wherein said source and said drain each form a heterojunction with said body.

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