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Chemical oxide removal of plasma damaged SiCOH low k dielectrics

  • US 7,368,393 B2
  • Filed: 04/20/2006
  • Issued: 05/06/2008
  • Est. Priority Date: 04/20/2006
  • Status: Expired due to Fees
First Claim
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1. A method, comprising:

  • depositing a mixture of gaseous hydrofluoric acid and ammonia gas onto a plasma induced damaged layer formed in a trench sidewall;

    forming volatile reaction products from a chemical reaction between the plasma induced damaged layer and the deposited mixture of ammonia gas and gaseous hydrofluoric acid; and

    removing the volatile reaction products with vacuum or a non-reactive flushing gas.

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