Accumulation device with charge balance structure and method of forming the same
First Claim
1. An accumulation-mode field effect transistor comprising:
- a drain terminal and a source terminal;
a semiconductor region comprising;
a plurality of gate trenches extending into the semiconductor region from a top surface of the semiconductor region;
a channel region of a first conductivity type between each adjacent pair of the plurality of gate trenches;
a plurality of columns of conduction region of the first conductivity type extending directly below the plurality of gate trenches; and
a plurality of columns of silicon material of a second conductivity type opposite the first conductivity type extending directly below the channel regions,wherein the plurality of columns of conduction region and the plurality of columns of silicon material abut each other to form alternating columns of opposite conductivity type regions extending between the source and drain terminals such that when the accumulation-mode field effect transistor is in the on state a current flows from the drain terminal to the source terminal through the plurality of columns of conduction region and the channel regions.
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Accused Products
Abstract
An accumulation-mode field effect transistor includes a plurality of gates and a semiconductor region having a channel region adjacent to but insulated from each of the plurality of gates. The semiconductor region further includes a conduction region wherein the channel regions and the conduction region are of a first conductivity type. The transistor further includes a drain terminal and a source terminal configured so that when the accumulation-mode field effect transistor is in the on state a current flows from the drain terminal to the source terminal through the conduction region and the channel regions. A number of charge balancing structures are integrated with the semiconductor region so as to extend parallel to the current flow. In a blocking state, the charge balancing structures influence an electric field in the conduction region so as to increase the blocking capability of the accumulation-mode field effect transistor.
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Citations
6 Claims
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1. An accumulation-mode field effect transistor comprising:
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a drain terminal and a source terminal; a semiconductor region comprising; a plurality of gate trenches extending into the semiconductor region from a top surface of the semiconductor region; a channel region of a first conductivity type between each adjacent pair of the plurality of gate trenches; a plurality of columns of conduction region of the first conductivity type extending directly below the plurality of gate trenches; and a plurality of columns of silicon material of a second conductivity type opposite the first conductivity type extending directly below the channel regions, wherein the plurality of columns of conduction region and the plurality of columns of silicon material abut each other to form alternating columns of opposite conductivity type regions extending between the source and drain terminals such that when the accumulation-mode field effect transistor is in the on state a current flows from the drain terminal to the source terminal through the plurality of columns of conduction region and the channel regions. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification