Electrode and interconnect materials for MEMS devices

• US 7,369,292 B2
• Filed: 05/03/2006
• Issued: 05/06/2008
• Est. Priority Date: 05/03/2006
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Gousev, Evgeni, Xu, Gang
• Primary Examiner(s): Schwartz; Jordan
• Assistant Examiner(s): JONES, JAMES
• Application Number:
  US11/416,920
• Publication Number:
  US 20070258123A1
• Time in Patent Office: 734 Days
• Field of Search: 359/245
• US Class Current: 359/245
• CPC Class Codes: B81B 2201/047 Optical MEMS not provided for in B81B2201/042 - B81B2201/045
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.

Claims

1. A microelectromechanical system (MEMS) device, comprising:

a conductor comprising a metallized semiconductor; and

a movable element configured to be actuated by said conductor,

wherein the MEMS device is an optical MEMS device,

and wherein the conductor comprises an electrode, and the movable element moves in response to an electrical potential between the conductor and the movable element, and the conductor has an electrical resistivity from about 10 μ

Ω

cm to about 100 μ

Ω

cm and an optical reflectance from about 5% to about 40%.

2. The device of claim 1, wherein the metallized semiconductor comprises at least one of metal one of silicon, germanium and gallium arsenide.

3. The device of claim 1, wherein the metallized semiconductor comprises at least one of nickel, molybdenum, cobalt, tantalum, and titanium.

4. The device of claim 1, further comprising electronic circuitry configured to actuate the movable element, wherein the electronic circuitry comprises a semiconductor.

5. The device of claim 1, further comprising an interferometric light modulation cavity between the movable element and the electrode.

6. The device of claim 1, wherein the electrode partially transmits light and partially reflects light.

7. The device of claim 1, wherein the electrode has a thickness from about 5 nm to about 100 nm.

8. The device of claim 1, further comprising electronic circuitry configured to actuate the movable element, wherein the electronic circuitry comprises a semiconductor.

9. The device of claim 1, further comprising:

a display;

a processor configured to communicate with the display, the processor configured to process image data; and

a memory device configured to communicate with the processor.

10. The device of claim 9, further comprising a driver circuit configured to send at least one signal to the display.

11. The device of claim 10, further comprising a controller configured to send at least a portion of said image data to the driver circuit.

12. The device as recited in claim 9, further comprising an image source module configured to send the image data to the processor.

13. The device of claim 12, wherein the image source module comprises at least one of a receiver, transceiver, and transmitter.

14. The device as recited in claim 9, further comprising an input device configured to receive input data and to communicate the input data to the processor.

15. A method of using a microelectromechanical system (MEMS) device, comprising:

applying a voltage to a conductor comprising a metallized semiconductor, wherein a movable element is actuated in response to the voltage, the conductor having an electrical resistivity from about 10 μ

Ω

cm to about 100 μ

Ω

cm and an optical reflectance from about 5% to about 40%.

16. The method of claim 15, wherein the metallized semiconductor comprises at least one of silicon, germanium and gallium arsenide.

17. The method of claim 15, wherein the metallized semiconductor comprises at least one of nickel, molybdenum, cobalt, tantalum, and titanium.

18. The method of claim 15, further comprising applying a voltage to electronic circuitry configured to actuate the movable element, wherein the electronic circuitry comprises a semiconductor.

19. The method of claim 15, further comprising modulating light.

20. The method of claim 15, further comprising interferometrically modulating light based at least in part on an electrical potential between the conductor and the movable element.

21. The method of claim 15, further comprising partially transmitting light through the conductor and partially reflecting light from the conductor.

22. The method of claim 15, further comprising applying a voltage to electronic circuitry configured to actuate the movable element, wherein the electronic circuitry comprises a semiconductor.

23. A method of manufacturing a microelectromechanical system (MEMS) device, the method comprising:

forming a conductor comprising a metallized semiconductor;

the conductor having an electrical resistivity from about 10 μ

Ω

cm to about 100 μ

Ω

cm and an optical reflectance from about 5% to about 40%; and

forming a movable element configured to be actuated by said conductor.

24. The method of claim 23, wherein forming the conductor is performed on a first production line configured to produce thin film transistors.

25. The method of claim 24, wherein forming the movable element is performed on a second production line.

26. The method of claim 24, wherein forming the movable element is performed on the first production line.

27. The method of claim 23, wherein the metallized semiconductor comprises at least one of metal one of silicon, germanium and gallium arsenide.

28. The method of claim 23, wherein the metallized semiconductor comprises at least one of nickel, molybdenum, cobalt, tantalum, and titanium.

29. The method of claim 23, further comprising forming electronic circuitry configured to actuate the movable element, wherein the electronic circuitry comprises a semiconductor.

30. The method of claim 23, further comprising configuring the device to modulate light.

31. The method of claim 23, further comprising configuring the device to interferometrically modulate light based at least in part on an electrical potential between the conductor and the movable element.

32. The method of claim 23, further comprising forming an interferometric light modulation cavity between the movable element and the conductor.

33. The method of claim 23, further comprising configuring the conductor to partially transmit light and to partially reflect light.

34. The method of claim 23, further comprising forming the conductor with a thickness from about 5 nm to about 100 nm.

35. The method of claim 23, further comprising forming electronic circuitry configured to actuate the movable element, wherein the electronic circuitry comprises a semiconductor.

36. A microelectromechanical system (MEMS) device made according to the method of claim 23.

37. A microelectromechanical system (MEMS) device, comprising:

means for actuating a MEMS element, wherein the actuating means is configured to partially transmit light and to partially reflect light, and the actuating means is configured to reflect from about 5% to about 40% of incident light.

38. The device of claim 37, wherein the actuating means comprises a conductor comprising a metallized semiconductor.