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Method of manufacturing thin film semiconductor device, thin film semiconductor device, electro-optical device, and electronic apparatus

  • US 7,371,624 B2
  • Filed: 07/07/2005
  • Issued: 05/13/2008
  • Est. Priority Date: 09/30/2004
  • Status: Active Grant
First Claim
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1. A method of manufacturing a thin film semiconductor device, the thin film semiconductor device including a thin film transistor having a first semiconductor layer, a gate insulating layer, and a gate electrode which are laminated in this order on a substrate, and a capacitive element having a lower electrode that conductively connects a second semiconductor layer coplanar with the first semiconductor layer, a dielectric layer coplanar with the gate insulating layer, and an upper electrode coplanar with the gate electrode which are laminated in this order on the substrate, the method comprising:

  • after simultaneously forming the gate insulating layer and the dielectric layer, and before forming the gate electrode and the upper electrode,introducing dopants into the second semiconductor layer from a first opening of a mask formed on a surface of the substrate to form the lower electrode; and

    etching a surface of the dielectric layer from the first opening of the mask.

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