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Methods of forming transistors

  • US 7,371,647 B2
  • Filed: 09/01/2005
  • Issued: 05/13/2008
  • Est. Priority Date: 06/22/2000
  • Status: Expired due to Fees
First Claim
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1. A method of forming a transistor, comprising:

  • forming a gate oxide over a semiconductor substrate, the gate oxide comprising an upper surface;

    plasma activating NH3 to form an activated nitrogen species;

    exposing the upper surface of the gate oxide to the activated nitrogen species without biasing the semiconductor substrate, the exposing allowing penetration of nitrogen into the upper surface without any measurable amount of nitrogen penetrating substantially below the upper surface;

    forming a gate of conductively-doped silicon over the gate oxide;

    forming source/drain regions in the semiconductor substrate operatively proximate the gate; and

    wherein an entirety of all nitrogen formed in the gate oxide exists at the upper surface without any measurable amount of nitrogen existing substantially below the upper surface.

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