Methods of forming transistors
First Claim
1. A method of forming a transistor, comprising:
- forming a gate oxide over a semiconductor substrate, the gate oxide comprising an upper surface;
plasma activating NH3 to form an activated nitrogen species;
exposing the upper surface of the gate oxide to the activated nitrogen species without biasing the semiconductor substrate, the exposing allowing penetration of nitrogen into the upper surface without any measurable amount of nitrogen penetrating substantially below the upper surface;
forming a gate of conductively-doped silicon over the gate oxide;
forming source/drain regions in the semiconductor substrate operatively proximate the gate; and
wherein an entirety of all nitrogen formed in the gate oxide exists at the upper surface without any measurable amount of nitrogen existing substantially below the upper surface.
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Abstract
The invention encompasses a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nitrogen within the silicon dioxide is at least 10 Å above the substrate. After the nitrogen is formed within the silicon dioxide layer, conductively doped silicon is formed on the silicon dioxide layer. The invention encompasses a method of forming a pair of transistors associated with a semiconductor substrate. First and second regions of the substrate are defined. A first oxide region is formed to cover the first region of the substrate, and to not cover the second region of the substrate. Nitrogen is formed within the first oxide region, and a first conductive layer is formed over the first oxide region. After the first conductive layer is formed, a second oxide region is formed over the second region of the substrate. A second conductive layer is formed over the second oxide region. The first conductive layer is patterned into a first transistor gate, and the second conductive layer is patterned into a second transistor gate. First source/drain regions are formed proximate the first transistor gate, and the second source/drain regions are formed proximate the second transistor gate. The invention also encompasses semiconductor assemblies.
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Citations
20 Claims
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1. A method of forming a transistor, comprising:
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forming a gate oxide over a semiconductor substrate, the gate oxide comprising an upper surface; plasma activating NH3 to form an activated nitrogen species; exposing the upper surface of the gate oxide to the activated nitrogen species without biasing the semiconductor substrate, the exposing allowing penetration of nitrogen into the upper surface without any measurable amount of nitrogen penetrating substantially below the upper surface; forming a gate of conductively-doped silicon over the gate oxide; forming source/drain regions in the semiconductor substrate operatively proximate the gate; and wherein an entirety of all nitrogen formed in the gate oxide exists at the upper surface without any measurable amount of nitrogen existing substantially below the upper surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of forming a transistor, comprising:
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forming a gate oxide over a semiconductor substrate, the gate oxide comprising an upper surface; plasma activating NH3 to form an activated nitrogen species; exposing the upper surface of the gate oxide to the activated nitrogen species without biasing the semiconductor substrate, the exposing allowing penetration of nitrogen into the upper surface without any measurable amount of nitrogen penetrating substantially below the upper surface; forming a gate of conductively-doped silicon over the gate oxide; forming source/drain regions in the semiconductor substrate operatively proximate the gate; and wherein the exposing comprises maintaining a temperature of the semiconductor substrate at from about 550°
C. to about 1,000°
C.
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20. A method of forming a transistor, comprising:
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forming a gate oxide over a semiconductor substrate, the gate oxide comprising an upper surface; plasma activating NH3 to form an activated nitrogen species; exposing the upper surface of the gate oxide to the activated nitrogen species without biasing the semiconductor substrate, the exposing allowing penetration of nitrogen into the upper surface without any measurable amount of nitrogen penetrating substantially below the upper surface; forming a gate of conductively-doped silicon over the gate oxide; forming source/drain regions in the semiconductor substrate operatively proximate the gate; and wherein the plasma activating NH3 comprises; forming the activated nitrogen species in a chamber; and maintaining a pressure within the chamber of from about 0.8 Torr to about 2.8 Torr.
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Specification