Controlled cleaving process

• US 7,371,660 B2
• Filed: 11/16/2005
• Issued: 05/13/2008
• Est. Priority Date: 05/12/1997
• Status: Expired due to Fees

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Henley, Francois J., Cheung, Nathan W.
• Primary Examiner(s): LEE, HSIEN MING
• Application Number:
  US11/281,042
• Publication Number:
  US 20060141747A1
• Time in Patent Office: 909 Days
• Field of Search: 438/455, 438/528, 438/458, 438/459
• US Class Current: 438/455
• CPC Class Codes: B81C 1/0038 Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
• CPC Class Codes: B81C 2201/0191 Transfer of a layer from a carrier wafer to a device wafer
• CPC Class Codes: B81C 2201/0192 by cleaving the carrier wafer
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/2236 from or into a plasma phase
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/7624 using semiconductor on insulator [SOI] technology H01L21/76297 takes precedence; manufacture of integrated circuits on insulating substrates H01L21/84; silicon on sapphire [SOS] technology H01L21/86
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/7813 leaving a reusable substrate, e.g. epitaxial lift off
• CPC Class Codes: Y10S 117/915 Separating from substrate
• CPC Class Codes: Y10S 156/93 Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
• CPC Class Codes: Y10S 438/974 Substrate surface preparation
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate
• CPC Class Codes: Y10T 156/11 Methods of delaminating, per se; i.e. , separating at bonding face
• CPC Class Codes: Y10T 156/1158 Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
• CPC Class Codes: Y10T 156/19 Delaminating means
• CPC Class Codes: Y10T 428/21 Circular sheet or circular blank
• CPC Class Codes: Y10T 428/24893 : including particulate material
• CPC Class Codes: Y10T 428/249956 : Void-containing component is inorganic

Abstract

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Claims

1. A method for forming multilayered substrates for flat panel displays, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, wherein the multi-layered substrate comprises the film of silicon material overlying the dielectric handle substrate, and wherein the voltage between the donor substrate and the handle substrate is provided by an electro-static bonding process.

2. The method of claim 1 wherein the voltage raises a temperature of the donor substrate and the dielectric handle substrate.

3. The method of claim 1 wherein the dielectric handle substrate comprises glass.

4. The method of claim 1 wherein the dielectric handle substrate comprises quartz.

5. The method of claim 1 wherein the multilayered substrate is the film of silicon material on the dielectric handle substrate comprising glass.

6. The method of claim 1 further comprising plasma activating the surface region of the film of silicon material before the coupling.

7. The method of claim 6 wherein the plasma activating comprises a plasma cleaning process.

8. The method of claim 7 wherein the plasma cleaning process uses a non-reactive gas.

9. The method of claim 1 wherein the surface region of the film of silicon material is dry before coupling.

10. The method of claim 1 wherein a surface region of the dielectric handle substrate is dry before coupling.

11. The method of claim 1 wherein the donor substrate and the dielectric handle substrate are subjected to a thermal source to elevate a temperature of the dielectric handle substrate and the donor substrate.

12. The method of claim 1 further comprising increasing a global energy of the donor substrate and the dielectric handle substrate using a thermal source.

13. A method for forming multilayered substrates for multi-layered substrates, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate;

increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, wherein the multi-layered substrate comprises the film of silicon material overlying the dielectric handle substrate, and wherein the voltage between the donor substrate and the handle substrate is provided by an electro-static bonding process.

14. The method of claim 13 wherein the voltage causes the temperature of the donor substrate and the dielectric handle substrate to increase.

15. The method of claim 13 wherein the dielectric handle substrate comprises glass.

16. The method of claim 13 wherein the dielectric handle substrate comprises quartz.

17. The method of claim 13 wherein the multilayered substrate is the film of silicon material on the dielectric handle substrate comprising glass.

18. The method of claim 13 further comprising plasma activating the surface region of the film of silicon material before the coupling.

19. The method of claim 18 wherein the plasma activating comprises a plasma cleaning process.

20. The method of claim 19 wherein the plasma cleaning process uses a non-reactive gas.

21. The method of claim 13 wherein the surface region of the film of material is dry before coupling.

22. The method of claim 13 wherein a surface region of the dielectric handle substrate is dry before coupling.

23. The method of claim 13 wherein the increasing of the temperature is provided by a thermal source.

24. The method of claim 23 wherein the thermal source is selected from a photon beam, a fluid jet, a liquid jet, a gas jet, an electro/magnetic field, an electron beam, a thermo electric heating process, or a furnace.

25. The method of claim 23 wherein the thermal source is a time varying process.

26. The method of claim 13 wherein the cleaving action is in a selected portion of the donor substrate.

27. The method of claim 26 wherein the selected portion is an edge region.

28. A method for forming multilayered substrates for multi-layered substrates, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate;

increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, wherein the increasing of the temperature is provided by a thermal source, and wherein the thermal source is a spatially varying process.

29. The method of claim 28 wherein the spatially varying process is provided in a z-direction.

30. The method of claim 28 wherein the spatially varying process is provided along a face of the donor substrate.

31. The method of claim 28 wherein the thermal source is a continuous process.

32. A method for forming solar cells, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate;

increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and

removing the film of silicon material for a solar cell.

33. A method for forming multilayered substrates for flat panel displays, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising,

introducing a plurality of particles through a surface of the donor substrate into the donor substrate, wherein the plurality of particles includes hydrogen in combination with helium.

34. The method of claim 33 wherein at least one of the plurality of particles is derived from a source selected from the group consisting of hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds.

35. The method of claim 33 wherein at least one of the plurality of particles is selected from the group consisting of neutral molecules, neutral atoms, charged molecules, charged atoms, and electrons.

36. A method for forming multilayered substrates for flat panel displays, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising.

introducing a plurality of particles through a surface of the donor substrate into the donor substrate, wherein the plurality of particles includes hydrogen in combination with a rare gas.

37. A method for forming multilayered substrates for flat panel displays, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising,

introducing a plurality of particles through a surface of the donor substrate into the donor substrate, and

implanting a second plurality of particles through the surface into the donor substrate.

38. The method of claim 37 wherein the second plurality of particles includes hydrogen.

39. The method of claim 37 wherein one of the plurality of particles and the second plurality of particles includes hydrogen, and the other of the plurality of particles and the second plurality of particles includes helium.

40. The method of claim 37 wherein one of the plurality of particles and the second plurality of particles includes hydrogen, and the other of the plurality of particles and the second plurality of particles includes a rare gas.

41. The method of claim 37 wherein at least one of the plurality of particles is provided in the cleave region.

42. A method for forming multilayered substrates for flat panel displays, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising,

introducing a plurality of first particles through a surface of the donor substrate into the donor substrate, and

implanting a plurality of second particles through the surface into the donor substrate, wherein a first particle of the plurality of first particles or a second particle of the plurality of second particles is derived from a source selected from the group consisting of hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds.

43. A method for forming multilayered substrates for flat panel displays, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising,

introducing a plurality of first particles through a surface of the donor substrate into the donor substrate, and

implanting a plurality of second particles through the surface into the donor substrate, wherein a first particle of the plurality of first particles or a second particle of the plurality of second particles is derived from a source selected from the group consisting of neutral molecules, neutral atoms, charged molecules, charged atoms, and electrons.

44. A method for forming multilayered substrates for flat panel displays, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising.

introducing a plurality of particles through a surface of the donor substrate into the donor substrate, wherein at least one of the plurality of particles remains in the film of silicon material after initiating the cleaving action.

45. A method for forming multilayered substrates for multi-layered substrates, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate;

increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising

introducing a plurality of particles through a surface of the donor substrate into the donor substrate, wherein the plurality of particles includes hydrogen in combination with helium.

46. The method of claim 45 wherein at least one of the plurality of particles is derived from a source selected from the group consisting of hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds.

47. The method of claim 45 wherein at least one of the plurality of particles is selected from the group consisting of neutral molecules, neutral atoms, charged molecules, charged atoms, and electrons.

48. The method of claim 45 wherein at least one of the plurality of particles is provided in the cleave region.

49. A method for forming multilayered substrates for multi-layered substrates, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate;

increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising

introducing a plurality of particles through a surface of the donor substrate into the donor substrate, wherein the plurality of particles includes hydrogen in combination with a rare gas.

50. A method for forming multilayered substrates for multi-layered substrates, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate;

increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising

introducing a first plurality of particles through a surface of the donor substrate into the donor substrate, wherein the first plurality of particles includes hydrogen in combination with helium, and

implanting a second plurality of particles through the surface of the donor substrate into the donor substrate.

51. The method of claim 50 wherein the second plurality of particles includes hydrogen.

52. The method of claim 50 wherein one of the first plurality of particles and the second plurality of particles includes hydrogen, and the other of the first plurality of particles and the second plurality of particles includes helium.

53. The method of claim 50 wherein one of the first plurality of particles and the second plurality of particles includes hydrogen, and the other of the first plurality of particles and the second plurality of particles includes a rare gas.

54. The method of claim 50 wherein a first particle of the first plurality of particles or a second particle of the second plurality of particles is derived from a source selected from the group consisting of hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds.

55. The method of claim 50 wherein a first particle of the first plurality of particles or a second particle of the second plurality of particles is derived from a source selected from the group consisting of neutral molecules, neutral atoms, charged molecules, charged atoms, and electrons.

56. A method for forming multilayered substrates for multi-layered substrates, the method comprising:

providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate;

coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate;

applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate;

increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and

initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising,

introducing a plurality of particles through a surface of the donor substrate into the donor substrate, wherein at least one of the plurality of particles remains in the film of silicon material after initiating the cleaving action.