Diode energy converter for chemical kinetic electron energy transfer
First Claim
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1. An electric generator converting pre-equilibrium chemical reaction product energy into electrical potential, comprising:
- a junction of a semiconductor and a conductor material,a stabilizing interlayer conductor formed on the conductor material that physically isolates chemical reactants from the junction;
a conducting surface formed on the stabilizing interlayer conductor, the conducting surface formed from one or more nanostructures in contact with or near a region containing chemical reaction products; and
a tailoring material on which the conductor material is formed arranged to prevent junction tearing and to form a uniform diode;
wherein the tailoring material is formed on the semiconductor,where the conductor material, the stabilizing interlayer conductor, the conducting surface, and the tailoring material are ballistic charge carrier conductors.
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Abstract
An improved diode energy converter for chemical kinetic electron energy transfer is formed using nanostructures and includes identifiable regions associated with chemical reactions isolated chemically from other regions in the converter, a region associated with an area that forms energy barriers of the desired height, a region associated with tailoring the boundary between semiconductor material and metal materials so that the junction does not tear apart, and a region associated with removing heat from the semiconductor.
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Citations
3 Claims
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1. An electric generator converting pre-equilibrium chemical reaction product energy into electrical potential, comprising:
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a junction of a semiconductor and a conductor material, a stabilizing interlayer conductor formed on the conductor material that physically isolates chemical reactants from the junction; a conducting surface formed on the stabilizing interlayer conductor, the conducting surface formed from one or more nanostructures in contact with or near a region containing chemical reaction products; and a tailoring material on which the conductor material is formed arranged to prevent junction tearing and to form a uniform diode; wherein the tailoring material is formed on the semiconductor, where the conductor material, the stabilizing interlayer conductor, the conducting surface, and the tailoring material are ballistic charge carrier conductors. - View Dependent Claims (2, 3)
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Specification