Semiconductor thin film, semiconductor device and manufacturing method thereof

• US 7,372,073 B2
• Filed: 07/19/2006
• Issued: 05/13/2008
• Est. Priority Date: 02/23/1996
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyanaga, Akiharu, Koyama, Jun, Fukunaga, Takeshi, Yamazaki, Shunpei
• Primary Examiner(s): Menz; Douglas M.
• Application Number:
  US11/458,412
• Publication Number:
  US 20060258069A1
• Time in Patent Office: 664 Days
• Field of Search: 257/49, 257/59, 257/64, 257/70, 257/72
• US Class Current: 257/49
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 27/1281 by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 27/1296 adapted to increase the uniformity of device parameters
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H10B 10/00 Static random access memory [SRAM] devices
• CPC Class Codes: H10B 10/125 the MOSFET being a thin film transistor [TFT]
• CPC Class Codes: H10B 12/05 Making the transistor
• CPC Class Codes: H10B 12/30 DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals parallel to the substrate surface without including crystal boundaries therein, allowing the active layer to consist of the mono-domain region only. The insulating film underlying the active layer has a specific surface configuration of an intended pattern in profile, including projections or recesses. To fabricate the active layer, form a silicon oxide film by sputtering on the substrate. Pattern the silicon oxide film providing the surface configuration. Form an amorphous silicon film by low pressure CVD on the silicon oxide film. Retain in the silicon oxide film and/or the amorphous silicon film certain metallic element for acceleration of silicon film to a crystalline silicon film. Then, perform a second heat treatment in the halogen atmosphere forming on the crystalline silicon film a thermal oxide film containing halogen, whereby the crystalline silicon film alters to a mono-domain region.

Claims

1. An SRAM comprising:

a substrate;

an insulating film formed on the substrate, said insulating film having a protrusion;

a pair of cross-coupled driver transistors formed over the substrate;

a pair of access transistors;

a pair of bit lines electrically connected to the cross-coupled driver transistors through the access transistors, respectively; and

a word line electrically connected to the pair of access transistors,

wherein at least one of the access transistors comprises a crystalline semiconductor film formed on the insulating film, said crystalline semiconductor film having a mono-domain region in which a channel formation region is formed, and

wherein said crystalline semiconductor film comprises a source region and a drain region, and a metallic silicide is formed on the surface of said source region and said drain region.

2. The SRAM according to claim 1 wherein said mono-domain region includes substantially no grain boundary.

3. The SRAM according to claim 1 wherein any grain boundary included in said mono-domain region is electrically inactive.

4. An electronic apparatus comprising the SRAM according to claim 1, wherein the electronic apparatus is selected from the group consisting of a head-mount display, a motor vehicle navigation, a mobile phone, a video camera, a projector, and a mobile computer, wherein the electronic apparatus.

5. An SRAM comprising:

a substrate;

an insulating film formed on the substrate, said insulating film having a protrusion extending in one direction;

a pair of cross-coupled driver transistors formed over the substrate;

a pair of access transistors;

a pair of bit lines electrically connected to the cross-coupled driver transistors through the access transistors, respectively; and

a word line electrically connected to the pair of access transistors,

wherein at least one of the cross-coupled driver transistors comprises a crystalline semiconductor film formed on the insulating film, said crystalline semiconductor film having a mono-domain region in which a channel formation region is formed, and

wherein said crystalline semiconductor film comprises a source region and a drain region, and a metallic silicide is formed on the surface of said source region and said drain region.

6. The SRAM according to claim 5 wherein said mono-domain region includes substantially no grain boundary.

7. The SRAM according to claim 5 wherein any grain boundary included in said mono-domain region is electrically inactive.

8. An electronic apparatus comprising the SRAM according to claim 5, wherein the electronic apparatus is selected from the group consisting of a head-mount display, a motor vehicle navigation, a mobile phone, a video camera, a projector, and a mobile computer, wherein the electronic apparatus.

9. An SRAM comprising:

a substrate;

an insulating film formed on the substrate, said insulating film having a protrusion extending in one direction;

a pair of cross-coupled driver transistors formed over the substrate;

a pair of access transistors;

a pair of bit lines electrically connected to the cross-coupled driver transistors through the access transistors, respectively; and

a word line electrically connected to the pair of access transistors,

wherein at least one of the access transistors comprises a crystalline semiconductor film formed on the insulating film, said crystalline semiconductor film having a mono-domain region in which a channel formation region is formed, and

wherein said crystalline semiconductor film comprises a source region and a drain region, and a metallic silicide is formed on the surface of said source region and said drain region.

10. The SRAM according to claim 9 wherein said mono-domain region includes substantially no grain boundary.

11. The SRAM according to claim 9 wherein any grain boundary included in said mono-domain region is electrically inactive.

12. An electronic apparatus comprising the SRAM according to claim 9, wherein the electronic apparatus is selected from the group consisting of a head-mount display, a motor vehicle navigation, a mobile phone, a video camera, a projector, and a mobile computer, wherein the electronic apparatus.

13. An SRAM comprising:

a first layer comprising at least one first transistor and an insulating film formed over the first transistor;

a second layer on the first insulating film;

wherein the second layer comprises;

a pair of cross-coupled driver transistors;

a pair of access transistors;

a pair of bit lines electrically connected to the cross-coupled driver transistors through the access transistors, respectively; and

a word line electrically connected to the pair of access transistors,

wherein at least one of the access transistors comprises a crystalline semiconductor film formed on the insulating film, said crystalline semiconductor film having a mono-domain region in which a channel formation region is formed, and

wherein said crystalline semiconductor film comprises a source region and a drain region.

14. The SRAM according to claim 13 wherein said mono-domain region includes substantially no grain boundary.

15. The SRAM according to claim 13 wherein any grain boundary included in said mono-domain region is electrically inactive.

16. An electronic apparatus comprising the SRAM according to claim 13, wherein the electronic apparatus is selected from the group consisting of a head-mount display, a motor vehicle navigation, a mobile phone, a video camera, a projector, and a mobile computer, wherein the electronic apparatus.

17. An SRAM comprising:

a first layer comprising at least one first transistor and an insulating film formed over the first transistor;

a second layer on the first insulating film;

wherein the second layer comprises;

a pair of cross-coupled driver transistors;

a pair of access transistors;

a pair of bit lines electrically connected to the cross-coupled driver transistors through the access transistors, respectively; and

a word line electrically connected to the pair of access transistors,

wherein at least one of the cross-coupled driver transistors comprises a crystalline semiconductor film formed on the insulating film, said crystalline semiconductor film having a mono-domain region in which a channel formation region is formed, and

wherein said crystalline semiconductor film comprises a source region and a drain region.

18. The SRAM according to claim 17 wherein said mono-domain region includes substantially no grain boundary.

19. The SRAM according to claim 17 wherein any grain boundary included in said mono-domain region is electrically inactive.

20. An electronic apparatus comprising the SRAM according to claim 17, wherein the electronic apparatus is selected from the group consisting of a head-mount display, a motor vehicle navigation, a mobile phone, a video camera, a projector, and a mobile computer, wherein the electronic apparatus.

21. An SRAM comprising:

a first layer comprising at least one first transistor and an insulating film formed over the first transistor;

a second layer on the first insulating film;

wherein the second layer comprises;

a pair of cross-coupled driver transistors;

a pair of access transistors;

a pair of bit lines electrically connected to the cross-coupled driver transistors through the access transistors, respectively; and

a word line electrically connected to the pair of access transistors,

wherein at least one of the access transistors comprises a crystalline semiconductor film formed on the insulating film, said crystalline semiconductor film having a mono-domain region in which a channel formation region is formed, and

wherein said crystalline semiconductor film comprises a source region and a drain region.

22. The SRAM according to claim 21 wherein said mono-domain region includes substantially no grain boundary.

23. The SRAM according to claim 21 wherein any grain boundary included in said mono-domain region is electrically inactive.

24. An electronic apparatus comprising the SRAM according to claim 21, wherein the electronic apparatus is selected from the group consisting of a head-mount display, a motor vehicle navigation, a mobile phone, a video camera, a projector, and a mobile computer, wherein the electronic apparatus.