×

Semiconductor thin film, semiconductor device and manufacturing method thereof

  • US 7,372,073 B2
  • Filed: 07/19/2006
  • Issued: 05/13/2008
  • Est. Priority Date: 02/23/1996
  • Status: Expired due to Fees
First Claim
Patent Images

1. An SRAM comprising:

  • a substrate;

    an insulating film formed on the substrate, said insulating film having a protrusion;

    a pair of cross-coupled driver transistors formed over the substrate;

    a pair of access transistors;

    a pair of bit lines electrically connected to the cross-coupled driver transistors through the access transistors, respectively; and

    a word line electrically connected to the pair of access transistors,wherein at least one of the access transistors comprises a crystalline semiconductor film formed on the insulating film, said crystalline semiconductor film having a mono-domain region in which a channel formation region is formed, andwherein said crystalline semiconductor film comprises a source region and a drain region, and a metallic silicide is formed on the surface of said source region and said drain region.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×