Acoustic resonator
First Claim
Patent Images
1. An FBAR device comprising:
- a bottom electrode;
a top electrode;
a piezoelectric layer in between the bottom electrode and the top electrode, the piezoelectric layer having a first overlap with the bottom electrode, the first overlap being defined by a projection of the piezoelectric layer onto the bottom electrode in a direction substantially perpendicular to a plane of the bottom electrode;
a first dielectric layer in between the piezoelectric layer and the bottom electrode, the first dielectric layer having a first thickness; and
a mechanism for reversibly varying an internal impedance of the device, so as to tune a resonant frequency of the FBAR device.
1 Assignment
0 Petitions
Accused Products
Abstract
A tuneable film bulk acoustic resonator (FBAR) device. The FBAR device includes a bottom electrode, a top electrode and a piezoelectric layer in between the bottom electrode and the top electrode. The piezoelectric layer has a first overlap with the bottom electrode, where the first overlap is defined by a projection of the piezoelectric layer onto the bottom electrode in a direction substantially perpendicular to a plane of the bottom electrode. The FBAR device also includes a first dielectric layer in between the piezoelectric layer and the bottom electrode and a mechanism for reversibly varying an internal impedance of the device, so as to tune a resonant frequency of the FBAR device.
-
Citations
20 Claims
-
1. An FBAR device comprising:
-
a bottom electrode; a top electrode; a piezoelectric layer in between the bottom electrode and the top electrode, the piezoelectric layer having a first overlap with the bottom electrode, the first overlap being defined by a projection of the piezoelectric layer onto the bottom electrode in a direction substantially perpendicular to a plane of the bottom electrode; a first dielectric layer in between the piezoelectric layer and the bottom electrode, the first dielectric layer having a first thickness; and a mechanism for reversibly varying an internal impedance of the device, so as to tune a resonant frequency of the FBAR device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. An FBAR device comprising:
-
a bottom electrode; a top electrode; a piezoelectric layer in between the bottom electrode and the top electrode, the piezoelectric layer having a first overlap with the bottom electrode, the first overlap being defined by a projection of the piezoelectric layer onto the bottom electrode in a direction substantially perpendicular to a plane of the bottom electrode, and the piezoelectric layer having a second overlap with the top electrode, the second overlap being defined by a projection of the piezoelectric layer onto the top electrode in a direction substantially perpendicular to a plane of the top electrode; a first dielectric layer in between the piezoelectric layer and the bottom electrode, the first dielectric layer having a first thickness; a second dielectric in between the piezoelectric layer and the top electrode, the second dielectric layer having a second thickness; and a mechanism for reversibly varying an internal impedance of the FBAR device, so as to tune the resonant frequency of the device. - View Dependent Claims (12, 13, 14)
-
-
15. A method for tuning a resonant frequency of an FBAR device comprising a bottom electrode, a top electrode, a piezoelectric layer in between the bottom electrode and the top electrode, the piezoelectric layer having a first overlap with the bottom electrode, the first overlap being defined by a projection of the piezoelectric layer onto the bottom electrode in a direction substantially perpendicular to a plane of the bottom electrode, and a first dielectric layer in between the piezoelectric layer and the bottom electrode, the method comprising:
- varying an internal impedance of the FBAR device to tune the resonant frequency, wherein the tuning is reversible.
- View Dependent Claims (16, 17, 18, 19, 20)
Specification