×

GMR magnetic sensing element having an antiferromagnetic layer extending beyond the track width and method for making the same

  • US 7,372,672 B2
  • Filed: 11/08/2005
  • Issued: 05/13/2008
  • Est. Priority Date: 02/05/2001
  • Status: Expired due to Term
First Claim
Patent Images

1. A magnetic sensing element comprising, in order from the bottom,a first antiferromagnetic layer;

  • a pinned magnetic layer;

    a nonmagnetic material layer;

    a free magnetic layer;

    a nonmagnetic layer;

    a ferromagnetic layer; and

    a bias antiferromagnetic layer,wherein the free magnetic layer is formed between the nonmagnetic material layer and the nonmagnetic layer, the pinned magnetic layer is formed between the nonmagnetic material layer and the first antiferromagnetic layer, and the ferromagnetic layer is formed between the nonmagnetic layer and the bias antiferromagnetic layer, the magnetization direction of the ferromagnetic layer is oriented in a direction orthogonal to the magnetization direction of the pinned magnetic layer by an exchange coupling magnetic field with the bias antiferromagnetic layer,wherein the free magnetic layer is put into a single-magnetic-domain state by an interlayer coupling magnetic field due to a RKKY interaction with the ferromagnetic layer through the nonmagnetic layer, and the magnetization of the free magnetic layer is oriented in a direction orthogonal to the magnetization direction of the pinned magnetic layer,wherein a length of the first antiferromagnetic layer and the bias antiferromagnetic layer in a track width direction is larger than a length of the free magnetic layer in the track width directionwherein the nonmagnetic layer comprises at least one element selected from the group consisting of Ru, Rh, Ir, Cr, and Re.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×