GMR magnetic sensing element having an antiferromagnetic layer extending beyond the track width and method for making the same

• US 7,372,672 B2
• Filed: 11/08/2005
• Issued: 05/13/2008
• Est. Priority Date: 02/05/2001
• Status: Expired due to Term

• Current Assignee: TDK Corporation
• Original Assignee: TDK Corporation
• Inventors: Nishiyama, Yoshihiro
• Primary Examiner(s): CASTRO, ANGEL A
• Application Number:
  US11/270,087
• Publication Number:
  US 20070252588A1
• Time in Patent Office: 917 Days
• Field of Search: 360/324.11, 360/324.12, 360/324.1, 360/324.2
• US Class Current: 360/324.11
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 5/3116 Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks G11B5/3113, G11B5/245 take precedence
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: Y10T 29/49044 Plural magnetic deposition layers

Abstract

A magnetic sensing element with improved magnetic detection output and a method for making the same are provided. In the magnetic sensing element, the length of an upper pinned magnetic layer an upper antiferromagnetic layer in a track width direction is larger than the length of a free magnetic layer in the track width direction. In making the magnetic sensing element, there is no need to remove side portions of the upper pinned magnetic layer and the upper antiferromagnetic layer. The materials of the upper pinned magnetic layer and the upper antiferromagnetic layer are thus prevented from redepositing on two side faces of the free magnetic layer during milling.

Claims

1. A magnetic sensing element comprising, in order from the bottom,

a first antiferromagnetic layer;

a pinned magnetic layer;

a nonmagnetic material layer;

a free magnetic layer;

a nonmagnetic layer;

a ferromagnetic layer; and

a bias antiferromagnetic layer,

wherein the free magnetic layer is formed between the nonmagnetic material layer and the nonmagnetic layer, the pinned magnetic layer is formed between the nonmagnetic material layer and the first antiferromagnetic layer, and the ferromagnetic layer is formed between the nonmagnetic layer and the bias antiferromagnetic layer, the magnetization direction of the ferromagnetic layer is oriented in a direction orthogonal to the magnetization direction of the pinned magnetic layer by an exchange coupling magnetic field with the bias antiferromagnetic layer,

wherein the free magnetic layer is put into a single-magnetic-domain state by an interlayer coupling magnetic field due to a RKKY interaction with the ferromagnetic layer through the nonmagnetic layer, and the magnetization of the free magnetic layer is oriented in a direction orthogonal to the magnetization direction of the pinned magnetic layer,

wherein a length of the first antiferromagnetic layer and the bias antiferromagnetic layer in a track width direction is larger than a length of the free magnetic layer in the track width direction

wherein the nonmagnetic layer comprises at least one element selected from the group consisting of Ru, Rh, Ir, Cr, and Re.

2. The magnetic sensing element according to claim 1, wherein the nonmagnetic layer is composed of Ru and has a thickness of 8 to 11 Å

or 15 to 21 Å

.

3. The magnetic sensing element according to claim 1, wherein a magnetic moment per unit area of the ferromagnetic layer is smaller than that of a magnetic moment per unit area of the free magnetic layer.

4. The magnetic sensing element according to claim 1, wherein the ferromagnetic layer includes a first ferromagnetic sub layer formed on the nonmagnetic layer side and a second ferromagnetic sub layer formed on the bias antiferromagnetic layer side, the first ferromagnetic sub layer comprises a ferromagnetic material containing Co and the second ferromagnetic sub layer includes NiFe layer or a NiFeX layer, wherein X includes at least one of Al, Si, Ti, V, Cr, Mn, Cu, Zr, Nb, Mo, Ru, Rh, Hf, Ta, W, Ir, and Pt.

5. The magnetic sensing element according to claim 1, wherein the free magnetic layer includes a first free magnetic sub layer formed on the nonmagnetic layer side and a second free magnetic sub layer formed on the nonmagnetic conductive layer side, the first free magnetic sub layer includes a NiFe layer or a NiFeX layer, wherein X comprises at least one of Al, Si, Ti, V, Cr, Mn, Cu, Zr, Nb, Mo, Ru, Rh, Hf, Ta, W, Ir, and Pt, and the second free magnetic sub layer comprises a ferromagnetic material that includes Co.