Method of fabricating reflective spatial light modulator having high contrast ratio

• US 7,374,962 B2
• Filed: 09/29/2005
• Issued: 05/20/2008
• Est. Priority Date: 09/29/2005
• Status: Expired due to Fees

• Current Assignee: Miradia Inc. (Walsin Lihwa Corporation)
• Original Assignee: Miradia Inc. (Walsin Lihwa Corporation)
• Inventors: Huang, Kegang, Yang, Xiao, Chen, Dongmin
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US11/240,303
• Publication Number:
  US 20070287214A1
• Time in Patent Office: 964 Days
• Field of Search: 438/50, 438/52, 438/48, 438/55, 438/66, 438/67
• US Class Current: 438/67
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means

Abstract

The contrast offered by a spatial light modulator device may be enhanced by positioning nonreflective elements such as supporting posts and moveable hinges, behind the reflecting surface of the pixel. In accordance with one embodiment, the reflecting surface is suspended over and underlying hinge-containing layer by integral ribs of the reflecting material defined by gaps in a sacrificial layer. In accordance with an alternative embodiment, the reflecting surface is separated from the underlying hinge by a gap formed in an intervening layer, such as oxide. In either embodiment, walls separating adjacent pixel regions may be recessed beneath the reflecting surface to further reduce unwanted scattering of incident light and thereby enhance contrast.

Claims

1. A method for fabricating a reflecting pixel, the method comprising:

providing a silicon layer bearing a conducting layer and supported by an underlying post over a CMOS substrate;

etching through the conducting layer and the silicon layer in gaps of a first photoresist mask to define openings adjacent to a moveable hinge portion in the silicon layer;

depositing a reflecting material within via holes defined by a second photoresist mask patterned over the conducting layer; and

removing the second photoresist mask to leave the reflecting material supported over the conducting layer and hinge by projections at the former location of the via holes.

2. The method of claim 1 further comprising:

patterning a third photoresist mask over the reflecting material, to expose inter-pixel regions;

etching the reflecting material and the silicon layer in inter-pixel regions to define discrete pixels; and

removing the second and third photoresist masks in a same step.

3. The method of claim 1 wherein providing the silicon layer comprises providing a silicon-on-insulator (SOI) substrate, and then removing insulator material and backside silicon to produce the silicon layer.

4. The method of claim 1 wherein depositing the reflecting material comprises depositing aluminum.

5. The method of claim 1 further comprising forming an adhesion component of the conducting layer between the reflecting material and the silicon layer.

6. The method of claim 2 wherein the CMOS substrate further comprises raised walls in the inter-pixel regions, the method further comprising etching the raised walls during the step of etching the reflecting material and the silicon layer in inter-pixel regions.

7. A method for fabricating a reflecting pixel, the method comprising:

providing a silicon layer supported by an underlying post over a CMOS substrate;

forming a dielectric layer over the silicon layer;

etching through the dielectric layer and the silicon layer in gaps of a first photoresist mask to define openings adjacent to a moveable hinge portion in the silicon layer;

removing the dielectric layer over the moveable hinge;

forming photoresist material within the openings;

depositing a reflecting material over the dielectric and the photoresist material; and

removing the photoresist material to leave the reflecting material separated from the moveable hinge by a space.

8. The method of claim 7 further comprising:

patterning a second photoresist mask over the reflecting material, to expose inter-pixel regions;

etching the reflecting material, the dielectric layer, and the silicon layer in inter-pixel regions to define discrete pixels; and

removing the second photoresist mask and the reflecting material in a same step.

9. The method of claim 7 wherein providing the silicon layer comprises providing a silicon-on-insulator (SOI) substrate, and then removing insulator material and backside silicon to produce the silicon layer.

10. The method of claim 7 wherein depositing the reflecting material comprises depositing aluminum.

11. The method of claim 7 wherein removing the dielectric from over the hinge comprises:

patterning a third photoresist mask to expose a portion of the dielectric material overlying the hinge; and

etching the portion.

12. The method of claim 7 wherein forming the dielectric layer comprises depositing silicon oxide.

13. The method of claim 7 wherein forming the photoresist material within the openings comprises:

forming photoresist over the oxide;

developing only upper regions of the photoresist; and

removing the developed upper regions of the photoresist to leave undeveloped lower regions of the photoresist within the openings.

14. The method of claim 7 further comprising forming a conducting layer between the reflecting material and the silicon layer.

15. The method of claim 8 wherein the CMOS substrate further comprises raised walls in the inter-pixel regions, the method further comprising etching the raised walls during the step of etching the reflecting material and the silicon layer in inter-pixel regions.

16. A reflecting structure comprising:

a CMOS substrate comprising an electrode;

a first post and a second post each of the first post and the second post being coupled to the CMOS substrate wherein the first post and the second post overlie the CMOS substrate;

a moveable stack overlying each of the first post and the second post, the moveable stack comprising;

a silicon layer defining;

a moveable hinge portion extending along a diagonal line between the first post and the second post; and

a mirror support portion;

a plurality of supporting structures coupled to the mirror support portion; and

a reflecting surface supported by and overlying the plurality of supporting structures wherein the reflecting surface is free from contact with the moveable hinge portion.

17. The reflecting structure of claim 16 wherein the reflecting surface is supported over the moveable hinge by integral downward projections of the reflecting surface.

18. The reflecting structure of claim 16 wherein the reflecting surface is supported over the moveable hinge by a dielectric layer defining a space over the hinge.

19. The reflecting structure of claim 16 wherein the reflecting surface comprises aluminum.

20. The reflecting structure of claim 16 wherein the reflecting surface overlies the posts and the moveable hinge structure.